Name: RFM3N45
Brand: HARRIS
SKU: RFM3N45

Part No:

RFM3N45

Transistors

Manufacturer:

HARRIS

Description:

MOSFET (Metal Oxide) N-Channel 3Ohm @ 1.5A, 10V ±20V 750 pF @ 25 V 450 V TO-204AA, TO-3

Package:

-

RoHS Status:

-

Datasheet:

-

Production Status:

In Stock Status:

Specification

Type

Parameter

Mounting Type

Through Hole

Package / Case

TO-204AA, TO-3

Supplier Device Package

TO-3

Package

Bulk

Product Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

750 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drain to Source Voltage (Vdss)

450 V

Vgs (Max)

±20V

Products Detail

RFM3N45 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 750 pF @ 25 V.In order to operate this transistor, a voltage of 450 V is needed from the drain to the source (Vdss).