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Memory ICs are integrated circuits designed to store digital information for later retrieval and processing. They provide data retention through electronic storage structures and are used as fundamental building blocks in digital systems where information must be written, read, and preserved.
This category broadly includes memory devices that support different storage behaviors, such as temporary data storage and non-volatile data retention. Memory ICs are commonly distinguished by their underlying storage technology and access method, and they are typically managed through standardized digital interfaces for integration into electronic designs.
| Product | Manufacturer | In Stock Status | Price | Qty | RFQ | Description |
|---|---|---|---|---|---|---|
| SAMSUNG | Check Price | Get a Quote | K4A8G165WC-BCTD from SAMSUNG SEMICONDUCTOR INC stock available at AIchiplink，SDRAM DDR4 1.333GHz FBGA-96 DDR SDRAM ROHS | |||
| SAMSUNG | Yes | Check Price | Get a Quote | Samsung K4A8G085WC-BCTD is an 8Gb DDR4 SDRAM memory device featuring a 1G × 8-bit organization, 1.2V low-voltage operation, DDR4-3200 data rate support, and a compact 78-ball FBGA package. Designed for embedded computing, networking equipment, industrial automation, AI edge devices, and high-performance electronic systems, this Samsung DDR4 memory provides high bandwidth, efficient power consumption, and reliable operation for advanced memory applications. | ||
| SK HYNIX | Yes | Check Price | Get a Quote | SK hynix H5AN8G8NDJR-XNC 8Gb DDR4 SDRAM x8 3200Mbps FBGA-78 Memory IC SK hynix H5AN8G8NDJR-XNC is an 8Gb DDR4 SDRAM memory component featuring x8 organization, DDR4-3200 data rate, 1.2V low-power operation, and a compact FBGA-78 package. Designed for industrial computing, networking equipment, embedded systems, and AI edge applications, this DDR4 memory provides high-speed data access, reliable operation, and efficient power performance for modern electronic platforms. | ||
| Micron | Available | Check Price | Get a Quote | MT62F2G64D8EK-023 FAIT:C is a 128Gb LPDDR5 SDRAM memory device manufactured by Micron Technology. Featuring a 2G × 64 organization, x64 data bus, 441-ball TFBGA package, and high-speed LPDDR5 mobile DRAM architecture, it is designed for smartphones, tablets, automotive electronics, AI edge devices, embedded computing platforms, smart cameras, and multimedia systems. The MT62F2G64D8EK-023 FAIT:C delivers high memory density, low power consumption, compact integration, and reliable Micron LPDDR5 performance for advanced electronic designs. | ||
| SAMSUNG | Yes | Check Price | Get a Quote | Samsung KLM8G1GEUF-B04Q057 8GB eMMC 5.1 HS400 Embedded NAND Flash Memory Samsung KLM8G1GEUF-B04Q057 is an 8GB eMMC 5.1 embedded flash memory device featuring integrated NAND flash and controller technology, HS400 high-speed interface support, and a compact 11.5 mm × 13 mm BGA package. Designed for embedded Linux systems, industrial controllers, automotive electronics, smart devices, and IoT applications, this Samsung eMMC provides reliable storage performance with simplified system integration. | ||
| SAMSUNG | Yes | Check Price | Get a Quote | K4F6E3S4HM-MGCJ is a Samsung 16Gbit / 2GB LPDDR4 Mobile DRAM device organized as 512M x 32 and supplied in a compact 200-ball FBGA / TFBGA package. It operates as a low-power LPDDR4 memory solution with 3733Mbps-class performance, 1.1V low-voltage operation, and a commonly listed -25°C to +85°C temperature range. It is suitable for mobile devices, embedded computing platforms, single-board computers, consumer electronics, IoT gateways, networking equipment, video processing systems, and SoC-based products requiring high-bandwidth external system memory. | ||
| SAMSUNG | Yes | Check Price | Get a Quote | Samsung K4FBE3D4HB-KHCL02V 32Gb LPDDR4 SDRAM x32 4266Mbps FBGA-200 Industrial Memory Samsung K4FBE3D4HB-KHCL02V is a high-density 32Gb LPDDR4 SDRAM memory component featuring x32 organization, 4266Mbps data rate, 1.1V low-power operation, and a compact FBGA-200 package. Designed for AI edge computing, automotive electronics, industrial systems, smart cameras, and embedded processors, this Samsung LPDDR4 memory provides high bandwidth, low power consumption, and reliable operation in extended temperature environments. | ||
| Micron | Yes | Check Price | Get a Quote | Micron MT60B4G8AT-64B:B 4Gb DDR5 SDRAM x8 6400MT/s Low Power Memory Component Micron MT60B4G8AT-64B:B is a high-performance DDR5 SDRAM memory component featuring 4Gb density, x8 organization, DDR5-6400 data rate capability, and low-power 1.1V operation. Designed for AI edge computing, industrial systems, networking equipment, and high-performance embedded platforms, this DDR5 DRAM provides high bandwidth, improved efficiency, and reliable memory performance for next-generation electronic applications. | ||
| Micron | Yes | Check Price | Get a Quote | MT53D1024M32D4DT-046 AAT:D is a 32Gb LPDDR4 SDRAM device manufactured by Micron Technology. Featuring a 1G × 32 organization, 32-bit data bus width, 2.133GHz maximum clock frequency, LPDDR4-4266 class performance, compact 200-ball VFBGA package, and wide-temperature operation listed at -40°C to +105°C, it is suitable for automotive electronics, infotainment systems, telematics, industrial HMI, embedded computing, networking equipment, edge AI modules, smart displays, and high-performance compact electronic systems. The MT53D1024M32D4DT-046 AAT:D provides high-bandwidth, low-power Micron LPDDR4 memory performance for demanding embedded and automotive-grade system designs. | ||
| SK HYNIX | Available | Check Price | Get a Quote | The H5TQ4G63CFR-RDC is a SK hynix 4Gb DDR3 SDRAM memory IC designed for embedded systems, industrial controllers, networking equipment, multimedia devices, and processor-based applications. Featuring a 256M × 16-bit organization, 512MB memory capacity, 800MHz clock frequency, 1600Mb/s data rate, FBGA-96 package, 1.5V DDR3 operation, and advanced DDR3 functions including dynamic ODT, ZQ calibration, write leveling, auto precharge, and self-refresh, the SK hynix H5TQ4G63CFR-RDC provides reliable high-density memory performance for ARM processors, FPGA systems, embedded Linux platforms, communication equipment, and industrial computing applications. | ||
| GD | Available | Check Price | Get a Quote | The GD25LQ64ENIGR is a GigaDevice 64Mbit low-voltage SPI NOR Flash memory IC designed for embedded firmware storage, boot memory, configuration storage, and data logging applications. Featuring 64Mbit (8MB) NOR Flash capacity, 1.65V–2.0V low-voltage operation, SPI/Dual SPI/Quad SPI/QPI interfaces, 133MHz maximum clock frequency, fast read performance, security registers, OTP protection, unique ID functions, and a compact 8-USON 3mm × 4mm package, the GigaDevice GD25LQ64ENIGR provides a reliable non-volatile memory solution for IoT devices, embedded controllers, communication equipment, industrial electronics, and low-power electronic systems. | ||
| Micron | Available | Check Price | Get a Quote | MT41K128M16JT-125:K is a 2Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 128M × 16 organization, DDR3L-1600-class speed, 800MHz clock frequency, 1.35V low-power DDR3L operation, and compact 96-ball FBGA 8mm × 14mm package, it is suitable for embedded computing platforms, networking equipment, telecom infrastructure, industrial systems, FPGA development boards, consumer electronics, and long-life commercial devices. The MT41K128M16JT-125:K delivers reliable Micron DDR3L memory performance for compact, power-efficient, and mature electronic designs. | ||
| Nanya | Yes | Check Price | Get a Quote | The NT5CB256M16DP-EK is a Nanya 4Gb DDR3(L) SDRAM memory IC designed for embedded systems, networking equipment, industrial controllers, consumer electronics, and processor-based applications. Featuring a 256M × 16-bit memory organization, 512MB capacity, DDR3/DDR3L voltage flexibility, multiple speed grades up to DDR3-2133, and a compact 78-ball VFBGA package, the Nanya NT5CB256M16DP-EK provides reliable high-density volatile memory for ARM processors, FPGAs, DSP platforms, multimedia systems, and industrial computing applications. | ||
| Micron | Available | Check Price | Get a Quote | MT41K256M16TW-107 IT:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 256M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V low-power operation, compact 96-ball FBGA / TFBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage controllers, consumer electronics, and long-life commercial devices. The MT41K256M16TW-107 IT:P delivers reliable Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs. | ||
| Micron | Available | Check Price | Get a Quote | MT41K256M16TW-107:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 256M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V low-power operation, and compact 96-ball FBGA / TFBGA package, it is suitable for embedded computing platforms, networking equipment, telecom infrastructure, industrial systems, storage controllers, consumer electronics, and long-life commercial devices. The MT41K256M16TW-107:P delivers reliable Micron DDR3L memory performance for compact, power-efficient, and mature electronic designs. | ||
| SAMSUNG | Yes | Check Price | Get a Quote | The K4B4G1646E-BYK0 is a Samsung 4Gb DDR3L-1600 SDRAM memory IC featuring 512MB capacity, 256M × 16 organization, an x16 data bus, 800MHz clock frequency, 1600Mb/s per-pin transfer rate, and an 11-11-11 timing bin. It supports both 1.35V DDR3L and 1.5V DDR3 operation, includes eight memory banks, 8n prefetch, on-die termination, ZQ calibration and programmable latency functions, and is supplied in a compact 96-ball FBGA package measuring approximately 7.5 × 13.3mm. The K4B4G1646E-BYK0 is suitable for embedded computing, smart TVs, set-top boxes, networking equipment, communication processors, FPGA memory systems and legacy processor platforms requiring commercial-temperature 4Gb x16 DDR3L memory. Samsung now identifies its DDR3 family as discontinued, so lifecycle and supply-chain verification are recommended before procurement. | ||
| Micron | Yes | Check Price | Get a Quote | MT62F2G32D4DS-020 WT:F is a 32Gb LPDDR5 SDRAM memory IC manufactured by Micron Technology. Featuring a 2G × 32 architecture, high-bandwidth LPDDR5 interface, ultra-low power operation, advanced power management features, and a compact 315-ball TFBGA package, it is suitable for smartphones, tablets, automotive infotainment systems, AI edge computing devices, industrial embedded platforms, and high-performance mobile applications. The MT62F2G32D4DS-020 WT:F delivers next-generation Micron LPDDR5 performance optimized for bandwidth, efficiency, and system integration. | ||
| AMD | Yes | Check Price | Get a Quote | The XCF32PVOG48C is a 32Mb AMD/Xilinx Platform Flash FPGA configuration PROM designed for non-volatile storage of FPGA configuration bitstreams. Featuring in-system programmability, serial and parallel configuration support, JTAG / IEEE 1149.1 / IEEE 1532 programming compatibility, 1.65V to 2.0V low-voltage operation, up to 50MHz operating frequency, and a 48-TSOP surface-mount package, it is suitable for Xilinx FPGA boot configuration, industrial control boards, telecom equipment, test systems, embedded platforms, and legacy FPGA hardware maintenance. The XCF32PVOG48C is especially relevant for replacement and repair sourcing because major distributors list the exact part as obsolete. | ||
| Micron | Yes | Check Price | Get a Quote | The MT62F2G32D4DS-026 WT:B is a 32Gb LPDDR5 SDRAM memory IC manufactured by Micron Technology. Featuring a 2G × 32 architecture, ultra-high bandwidth LPDDR5 interface, low-power 1.05V operation, advanced power management features, and a compact 315-ball TFBGA package, it is suitable for automotive electronics, mobile devices, AI edge computing systems, industrial embedded platforms, and high-performance SoC applications. The MT62F2G32D4DS-026 WT:B delivers next-generation Micron LPDDR5 performance optimized for bandwidth, efficiency, and advanced computing workloads. | ||
| Microchip | Available | Check Price | Get a Quote | The AT24C02D-STUM-T is a 2-Kbit I²C-compatible serial EEPROM manufactured by Microchip Technology. Featuring 256 × 8 memory organization, 1.7V to 3.6V low-voltage operation, up to 1MHz Fast Mode Plus I²C support, 5ms maximum self-timed write cycle, hardware write protection, more than 1 million erase/write cycles, and more than 100 years data retention, it is ideal for configuration storage, calibration data, device identification, factory programming, embedded systems, IoT devices, industrial controllers, consumer electronics, and communication equipment. The AT24C02D-STUM-T provides reliable Microchip non-volatile EEPROM performance in a compact 5-pin SOT-23 surface-mount package. | ||
| GigaDevice | Yes | Check Price | Get a Quote | GD5F4GQ6UE is a 4Gbit SPI NAND Flash memory from GigaDevice, supporting x1, x2, and x4 SPI I/O with up to 104MHz operating frequency. Operating from 2.7V to 3.6V and housed in a compact WSON8 8mm x 6mm package, it is suitable for embedded systems, consumer electronics, industrial automation, networking equipment, IoT devices, automotive electronics, and high-density non-volatile storage applications. | ||
| SAMSUNG | Yes | Check Price | Get a Quote | K4A4G165WF-BIWE is a 4Gb DDR4 SDRAM memory IC manufactured by Samsung. Featuring a 256M × 16 organization, x16 data bus width, 1.2V-class DDR4 operation, and compact FBGA-96 surface-mount package, it is suitable for embedded computing platforms, industrial controllers, networking equipment, communication systems, smart displays, set-top boxes, edge computing modules, and high-performance digital systems. The K4A4G165WF-BIWE provides Samsung DDR4 SDRAM performance for compact, high-bandwidth, and low-voltage system memory applications. | ||
| Micron | Yes | Check Price | Get a Quote | 441-Ball, x32 Automotive LPDDR5X SDRAM (Y52P) Y52P, LPDDR5X, QDP (8GB), 8DP (16GB), 441b, MT62F1G64D4, MT62F2G64D8 MT62F2G64D8EK-023 AIT:C is a Micron 128Gbit / 16GB LPDDR5X mobile DRAM component organized as 2G x 64 and supplied in a compact 441-ball TFBGA package. It supports up to 8533MT/s data rate, 4266MHz clock frequency, 1.05V VDD2H / 0.5V VDDQ operation, 8-die stacked configuration, and an automotive-grade -40°C to +95°C temperature range. It is suitable for automotive infotainment, digital cockpit systems, ADAS platforms, edge AI devices, embedded computing, mobile devices, industrial vision systems, networking equipment, video processing, and high-performance SoC-based designs requiring high-bandwidth low-power memory. File Type: pdf Updated: 2025-09-15 | ||
| FORESEE | Yes | Check Price | Get a Quote | 128GB 2.7V~3.6V eMMC 5.1 235/- MB/s FBGA-153(11.5x13) Memory (ICs) ROHS | ||
| Nanya | Yes | Check Price | Get a Quote | NT5CC64M16GP-DI is a Nanya Technology 1Gbit DDR3L SDRAM memory IC organized as 64M x 16. It supports up to 1600Mbps data rate, operates from a 1.35V DDR3L supply, and is supplied in a compact 96-ball BGA / VFBGA package. With an 800MHz clock rate, 16-bit data bus, 8-bank architecture, and commercial 0°C to +95°C temperature range, it is suitable for embedded systems, networking equipment, industrial control boards, IoT gateways, consumer electronics, video processing systems, and compact computing platforms requiring high-speed external system memory. | ||
| Nanya | Available | Check Price | Get a Quote | NT5AD256M16D4-HR is a Nanya Technology 4Gbit DDR4 SDRAM memory IC organized as 256M x 16. It supports up to 2666Mbps data rate, operates from a 1.2V DDR4 supply, and is supplied in a compact 96-ball BGA / TFBGA package. With features such as auto self-refresh, built-in temperature sensor, write leveling, dynamic on-chip termination, ZQ calibration, and CRC support, it is suitable for embedded systems, networking equipment, consumer electronics, industrial control boards, IoT gateways, video processing systems, and other applications requiring high-speed external system memory. | ||
| Micron | Yes | Check Price | Get a Quote | M25P80-VMW6TG is an 8Mb SPI Serial NOR Flash memory device manufactured by Micron Technology. Featuring a SPI-compatible serial interface, 75MHz maximum clock frequency, 2.7V to 3.6V single-supply operation, page program support, sector erase capability, and compact SOIC-8 wide surface-mount package, it is suitable for embedded boot memory, firmware storage, configuration memory, industrial control systems, networking equipment, consumer electronics, and legacy product repair. The M25P80-VMW6TG provides reliable Micron Serial NOR Flash performance for mature 3.3V embedded storage designs. | ||
| Micron | Available | Check Price | Get a Quote | MT25QL01GBBB8ESF-0SIT is a 1Gb 3V Serial NOR Flash memory device manufactured by Micron Technology. Featuring a SPI / Dual SPI / Quad SPI interface, 133MHz clock frequency, 2.7V to 3.6V supply voltage, 16-pin SOIC / WSOIC package, and -40°C to +85°C industrial temperature range, it is suitable for embedded boot memory, firmware storage, FPGA configuration, BIOS/UEFI storage, industrial control systems, networking equipment, telecom infrastructure, IoT devices, consumer electronics, and transportation systems. The MT25QL01GBBB8ESF-0SIT delivers reliable Micron Serial NOR Flash performance for compact, high-capacity, and industrial-grade embedded storage designs. | ||
| Micron | Yes | Check Price | Get a Quote | MT29F16G08ABACAWP-ITZ:C is a 16Gb SLC NAND Flash memory device manufactured by Micron Technology. Featuring a 2G × 8 organization, x8 parallel NAND interface, 2.7V to 3.6V supply voltage, and 48-pin TSOP-I package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom terminals, medical instruments, data loggers, and consumer electronics. The MT29F16G08ABACAWP-ITZ:C delivers reliable Micron SLC NAND Flash performance for boot memory, firmware storage, non-volatile data storage, and long-life electronic designs. | ||
| Micron | Yes | Check Price | Get a Quote | IC FLASH 4GBIT PARALLEL 48TSOP I.FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I | ||
| Unknown | Available | Check Price | Get a Quote | MT41K128M16JT-125 IT:K TR is a 2Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 128M × 16 organization, DDR3L-1600-class speed, 800MHz clock frequency, 1.35V low-power DDR3L operation, compact 96-FBGA 8mm × 14mm package, -40°C to +95°C industrial temperature range, and tape-and-reel packaging, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, FPGA boards, consumer electronics, and long-life commercial devices. The MT41K128M16JT-125 IT:K TR delivers reliable Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs. | ||
| Micron | Yes | Check Price | Get a Quote | MT41K512M16VRN-107 IT:P is an 8Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V-class low-power operation, compact 96-FBGA 8mm × 14mm package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M16VRN-107 IT:P delivers reliable high-density Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs. | ||
| Micron | Available | Check Price | Get a Quote | MT41K512M16VRP-107 IT:P is an 8Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 16 organization, TwinDie™ architecture, DDR3L-1866 / 933MHz-class performance, 1.35V low-power operation, compact 96-ball FBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M16VRP-107 IT:P delivers reliable high-density Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs. | ||
| Micron | Available | Check Price | Get a Quote | MT41K512M8DA-107 IT:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 8 organization, DDR3L-1866-class speed, 933MHz clock frequency, 1.35V low-power operation, compact 78-ball FBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M8DA-107 IT:P delivers reliable Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs. | ||
| Micron | Available | Check Price | Get a Quote | MT41K512M8DA-107:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 8 organization, DDR3L-1866-class speed, 933MHz clock frequency, 1.35V low-power operation, and compact 78-ball FBGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M8DA-107:P delivers reliable Micron DDR3L memory performance for mature, compact, and power-efficient electronic designs. | ||
| Micron | Yes | Check Price | Get a Quote | MT48H32M16LFB4-6 IT:C is a 512Mb Mobile LPSDR SDRAM memory chip manufactured by Micron Technology. Featuring a 32M × 16 organization, x16 data bus, 166MHz-class clock speed, 5ns access time, compact 54-VFBGA 8mm × 8mm package, and -40°C to +85°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, portable devices, networking equipment, medical instruments, and communication modules. The MT48H32M16LFB4-6 IT:C provides reliable low-power Micron mobile SDRAM performance for mature embedded and long-life electronic designs. | ||
| Micron | Available | Check Price | Get a Quote | MT48LC16M16A2P-6A IT:G is a 256Mb SDR SDRAM memory chip manufactured by Micron Technology. Featuring a 16M × 16 organization, x16 data bus, 166 / 167MHz-class clock speed, 3.3V operation, 54-pin TSOP package, and -40°C to +85°C industrial temperature range, it is suitable for legacy embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The MT48LC16M16A2P-6A IT:G provides reliable Micron SDRAM performance for mature 3.3V memory designs and long-life electronic systems. | ||
| Micron | Yes | Check Price | Get a Quote | MT48LC4M32B2P-6A IT:L is a 128Mb SDR SDRAM memory chip manufactured by Micron Technology. Featuring a 4M × 32 organization, x32 data bus, 166 / 167MHz-class clock speed, 3.3V operation, TSOP-86 package, and -40°C to +85°C industrial temperature range, it is suitable for legacy embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The MT48LC4M32B2P-6A IT:L provides reliable Micron SDRAM performance for mature 3.3V memory designs and long-life electronic systems. | ||
| Micron | Yes | Check Price | Get a Quote | MT53E2G32D4DE-046 AAT:C is a 64Gb LPDDR4X SDRAM memory device manufactured by Micron Technology. Featuring a 2G × 32 organization, 4266MT/s-class data rate, low-power LPDDR4X architecture, and compact 200-ball TFBGA package, it is suitable for automotive electronics, embedded computing platforms, AI edge devices, smart cameras, industrial systems, multimedia equipment, and high-performance mobile products. The MT53E2G32D4DE-046 AAT:C delivers high memory density, low power consumption, compact integration, and reliable Micron mobile DRAM performance for advanced electronic designs.s | ||
| Micron | Yes | Check Price | Get a Quote | MTFC8GAKAJCN-4M IT is an 8GB eMMC 5.0 embedded flash memory device manufactured by Micron Technology. Featuring 64Gbit NAND Flash capacity, MLC NAND technology, MMC/eMMC interface, and a compact 153-VFBGA 11.5mm × 13mm package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical instruments, IoT gateways, and smart devices. The MTFC8GAKAJCN-4M IT provides reliable managed NAND storage with simplified system integration, industrial temperature operation, and dependable Micron embedded memory performance. | ||
| Nanya | Yes | Check Price | Get a Quote | NT5AD512M16C4-JR is an 8Gb DDR4 SDRAM memory chip manufactured by Nanya Technology. Featuring a 512M × 16 organization, 3200Mbps DDR4-3200 data rate, 1.2V low-power operation, and compact 96-ball BGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, memory modules, and smart devices. The NT5AD512M16C4-JR delivers reliable high-speed Nanya DDR4 memory performance for compact, efficient, and cost-effective electronic designs. | ||
| Nanya | Available | Check Price | Get a Quote | NT5AD256M16E4-JR is a 4Gb DDR4 SDRAM memory chip manufactured by Nanya Technology. Featuring a 256M × 16 organization, 3200Mbps DDR4-3200 data rate, 1.2V low-power operation, and compact 96-ball BGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, memory modules, and smart devices. The NT5AD256M16E4-JR delivers reliable high-speed Nanya DDR4 memory performance for compact, efficient, and cost-effective electronic designs. | ||
| SAMSUNG | Available | Check Price | Get a Quote | KHBB84A03B-MC1J is a 24GB HBM3E High Bandwidth Memory device manufactured by Samsung. Featuring a wide HBM interface, advanced stacked DRAM architecture, and high-speed HBM3E performance, it is designed for AI accelerators, data center GPUs, high-performance computing systems, machine learning servers, advanced compute ASICs, and cloud acceleration platforms. The KHBB84A03B-MC1J delivers high memory bandwidth, compact integration, and reliable Samsung HBM technology for next-generation AI and data center hardware. | ||
| SAMSUNG | Available | Check Price | Get a Quote | KHBBC4B03C-MC1K is a 36GB HBM3E High Bandwidth Memory device manufactured by Samsung. Featuring 9.2Gbps speed, high-capacity stacked DRAM architecture, and an advanced HBM interface, it is designed for AI accelerators, data center GPUs, high-performance computing systems, machine learning servers, and advanced compute ASICs. The KHBBC4B03C-MC1K delivers extreme bandwidth, compact integration, and reliable Samsung HBM3E memory performance for next-generation AI and data center platforms. | ||
| SAMSUNG | Available | Check Price | Get a Quote | K4AAG165WA-BCWE is a 16Gb DDR4 SDRAM memory chip manufactured by Samsung. Featuring a 1G × 16 organization, DDR4-3200 / 3200Mbps speed grade, 1.2V low-power operation, and compact 96-ball FBGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, servers, storage systems, and high-performance consumer electronics. The K4AAG165WA-BCWE delivers high-density Samsung DDR4 memory performance for compact, reliable, and bandwidth-demanding electronic designs. | ||
| SAMSUNG | Yes | Check Price | Get a Quote | K4B2G1646F-BYMA is a 2Gb DDR3L SDRAM memory chip manufactured by Samsung. Featuring a 128M × 16 organization, DDR3L-1866 performance class, 1.35V low-power operation, and compact FBGA-96 package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The K4B2G1646F-BYMA provides reliable Samsung DDR3L memory performance for compact, low-power, and long-life electronic designs. | ||
| SAMSUNG | Yes | Check Price | Get a Quote | K4U6E3S4AA-MGCL is a 16Gb LPDDR4X SDRAM memory chip manufactured by Samsung. Featuring x32 organization, 4266Mbps data rate, low-power LPDDR4X architecture, and a compact 200-ball FBGA package, it is suitable for smartphones, tablets, embedded computing platforms, AI edge devices, smart home products, IoT gateways, and consumer electronics. The K4U6E3S4AA-MGCL delivers high bandwidth, efficient power consumption, and reliable Samsung mobile DRAM performance for compact modern electronic systems. | ||
| SAMSUNG | Yes | Check Price | Get a Quote | K4B2G1646F-BCNB is a 2Gb DDR3 SDRAM memory chip manufactured by Samsung. Featuring a 128M × 16 organization, DDR3-2133 performance, 1.5V operating voltage, and a compact 96-ball FBGA package, it is widely used in embedded computing platforms, industrial automation systems, networking equipment, medical devices, and consumer electronics. The K4B2G1646F-BCNB delivers reliable high-speed DDR3 memory performance, low system complexity, and excellent compatibility for a wide range of embedded and industrial applications. | ||
| SAMSUNG | Available | Check Price | Get a Quote | K4F6E3S4HM-THCL is a 16Gb LPDDR4 SDRAM memory device manufactured by Samsung. Featuring a 512M × 32 organization, up to 4266 Mbps performance, low-power LPDDR4 architecture, and a compact 200-ball FBGA package, it is designed for automotive electronics, AI edge devices, industrial embedded systems, networking equipment, smart cameras, and advanced mobile platforms. The K4F6E3S4HM-THCL delivers high bandwidth, low power consumption, and reliable operation for next-generation embedded and intelligent computing applications. | ||
| SAMSUNG | Available | Check Price | Get a Quote | K4A4G085WF-BCTD is a 4Gb DDR4 SDRAM memory chip manufactured by Samsung. Featuring a 512M × 8 organization, 2666Mbps data rate, 1.2V low-power operation, and compact 78-ball FBGA package, it is suitable for DDR4 memory modules, desktop computers, laptops, embedded systems, networking equipment, industrial control devices, and consumer electronics. The K4A4G085WF-BCTD delivers reliable Samsung DDR4 performance for compact and cost-effective memory designs. |
