Hot Electronic Components – In Stock & Ready to Ship

The K4B4G1646E-BYK0 is a Samsung 4Gb DDR3L-1600 SDRAM memory IC featuring 512MB capacity, 256M × 16 organization, an x16 data bus, 800MHz clock frequency, 1600Mb/s per-pin transfer rate, and an 11-11-11 timing bin. It supports both 1.35V DDR3L and 1.5V DDR3 operation, includes eight memory banks, 8n prefetch, on-die termination, ZQ calibration and programmable latency functions, and is supplied in a compact 96-ball FBGA package measuring approximately 7.5 × 13.3mm. The K4B4G1646E-BYK0 is suitable for embedded computing, smart TVs, set-top boxes, networking equipment, communication processors, FPGA memory systems and legacy processor platforms requiring commercial-temperature 4Gb x16 DDR3L memory. Samsung now identifies its DDR3 family as discontinued, so lifecycle and supply-chain verification are recommended before procurement.

EZ-BT? WICED Series Transceiver; Bluetooth® Smart Ready 4.x Dual Mode Board(s) 2.4GHz

M25P80-VMW6TG is an 8Mb SPI Serial NOR Flash memory device manufactured by Micron Technology. Featuring a SPI-compatible serial interface, 75MHz maximum clock frequency, 2.7V to 3.6V single-supply operation, page program support, sector erase capability, and compact SOIC-8 wide surface-mount package, it is suitable for embedded boot memory, firmware storage, configuration memory, industrial control systems, networking equipment, consumer electronics, and legacy product repair. The M25P80-VMW6TG provides reliable Micron Serial NOR Flash performance for mature 3.3V embedded storage designs.

MT25QL01GBBB8ESF-0SIT is a 1Gb 3V Serial NOR Flash memory device manufactured by Micron Technology. Featuring a SPI / Dual SPI / Quad SPI interface, 133MHz clock frequency, 2.7V to 3.6V supply voltage, 16-pin SOIC / WSOIC package, and -40°C to +85°C industrial temperature range, it is suitable for embedded boot memory, firmware storage, FPGA configuration, BIOS/UEFI storage, industrial control systems, networking equipment, telecom infrastructure, IoT devices, consumer electronics, and transportation systems. The MT25QL01GBBB8ESF-0SIT delivers reliable Micron Serial NOR Flash performance for compact, high-capacity, and industrial-grade embedded storage designs.

MT29F16G08ABACAWP-ITZ:C is a 16Gb SLC NAND Flash memory device manufactured by Micron Technology. Featuring a 2G × 8 organization, x8 parallel NAND interface, 2.7V to 3.6V supply voltage, and 48-pin TSOP-I package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom terminals, medical instruments, data loggers, and consumer electronics. The MT29F16G08ABACAWP-ITZ:C delivers reliable Micron SLC NAND Flash performance for boot memory, firmware storage, non-volatile data storage, and long-life electronic designs.

MT25QU256ABA1EW7-0SIT is a 256Mb 1.8V Serial NOR Flash memory device manufactured by Micron Technology. Featuring a SPI / Quad SPI interface, x4 I/O support, 166MHz high-speed operation, compact 8-pin WPDFN / MLP8 package, and -40°C to +85°C industrial temperature range, it is suitable for embedded boot memory, firmware storage, FPGA configuration, industrial control systems, networking equipment, telecom infrastructure, IoT devices, consumer electronics, and transportation systems. The MT25QU256ABA1EW7-0SIT delivers reliable Micron NOR Flash performance for compact, low-power, and high-speed embedded storage designs.

IC FLASH 4GBIT PARALLEL 48TSOP I.FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

MT41K128M16JT-125 IT:K TR is a 2Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 128M × 16 organization, DDR3L-1600-class speed, 800MHz clock frequency, 1.35V low-power DDR3L operation, compact 96-FBGA 8mm × 14mm package, -40°C to +95°C industrial temperature range, and tape-and-reel packaging, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, FPGA boards, consumer electronics, and long-life commercial devices. The MT41K128M16JT-125 IT:K TR delivers reliable Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT41K512M16VRN-107 IT:P is an 8Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V-class low-power operation, compact 96-FBGA 8mm × 14mm package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M16VRN-107 IT:P delivers reliable high-density Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT41K512M16VRP-107 IT:P is an 8Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 16 organization, TwinDie™ architecture, DDR3L-1866 / 933MHz-class performance, 1.35V low-power operation, compact 96-ball FBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M16VRP-107 IT:P delivers reliable high-density Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT41K512M8DA-107 IT:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 8 organization, DDR3L-1866-class speed, 933MHz clock frequency, 1.35V low-power operation, compact 78-ball FBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M8DA-107 IT:P delivers reliable Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT47H128M16RT-25E IT:C is a 2Gb DDR2 SDRAM memory chip manufactured by Micron Technology. Featuring a 128M × 16 organization, x16 data bus, DDR2-800 / 400MHz-class speed, 1.8V operation, compact 84-ball FBGA package, and industrial-temperature ordering option, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, consumer electronics, medical devices, and instrumentation products. The MT47H128M16RT-25E IT:C provides reliable Micron DDR2 memory performance for mature, long-life, and industrial electronic designs.

MT48H32M16LFB4-6 IT:C is a 512Mb Mobile LPSDR SDRAM memory chip manufactured by Micron Technology. Featuring a 32M × 16 organization, x16 data bus, 166MHz-class clock speed, 5ns access time, compact 54-VFBGA 8mm × 8mm package, and -40°C to +85°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, portable devices, networking equipment, medical instruments, and communication modules. The MT48H32M16LFB4-6 IT:C provides reliable low-power Micron mobile SDRAM performance for mature embedded and long-life electronic designs.

MT48LC16M16A2P-6A IT:G is a 256Mb SDR SDRAM memory chip manufactured by Micron Technology. Featuring a 16M × 16 organization, x16 data bus, 166 / 167MHz-class clock speed, 3.3V operation, 54-pin TSOP package, and -40°C to +85°C industrial temperature range, it is suitable for legacy embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The MT48LC16M16A2P-6A IT:G provides reliable Micron SDRAM performance for mature 3.3V memory designs and long-life electronic systems.

MT48LC4M32B2P-6A IT:L is a 128Mb SDR SDRAM memory chip manufactured by Micron Technology. Featuring a 4M × 32 organization, x32 data bus, 166 / 167MHz-class clock speed, 3.3V operation, TSOP-86 package, and -40°C to +85°C industrial temperature range, it is suitable for legacy embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The MT48LC4M32B2P-6A IT:L provides reliable Micron SDRAM performance for mature 3.3V memory designs and long-life electronic systems.

MT53E2G32D4DE-046 AAT:C is a 64Gb LPDDR4X SDRAM memory device manufactured by Micron Technology. Featuring a 2G × 32 organization, 4266MT/s-class data rate, low-power LPDDR4X architecture, and compact 200-ball TFBGA package, it is suitable for automotive electronics, embedded computing platforms, AI edge devices, smart cameras, industrial systems, multimedia equipment, and high-performance mobile products. The MT53E2G32D4DE-046 AAT:C delivers high memory density, low power consumption, compact integration, and reliable Micron mobile DRAM performance for advanced electronic designs.s

MTFC2GMDEA-0M WT A is a 2GB eMMC embedded flash memory device manufactured by Micron Technology. Featuring 16Gbit NAND Flash capacity, 2G × 8 organization, a standard MMC/eMMC interface, 2.7V to 3.6V supply voltage, and compact 153-WFBGA 11.5mm × 13mm package, it is suitable for embedded computing platforms, industrial terminals, networking equipment, consumer electronics, IoT gateways, medical instruments, and smart devices. The MTFC2GMDEA-0M WT A provides reliable managed NAND storage with simplified system integration and dependable Micron embedded memory performance.

MTFC4GACAJCN-4M IT is a 4GB eMMC 5.0 embedded flash memory device manufactured by Micron Technology. Featuring 32Gbit MLC NAND Flash capacity, an integrated eMMC controller, MMC/eMMC interface, compact 153-VFBGA 11.5mm × 13mm package, and -40°C to +85°C industrial temperature operation, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical instruments, IoT gateways, and smart devices. The MTFC4GACAJCN-4M IT provides reliable managed NAND storage with simplified system integration and dependable Micron embedded memory performance.

MTFC8GAKAJCN-4M IT is an 8GB eMMC 5.0 embedded flash memory device manufactured by Micron Technology. Featuring 64Gbit NAND Flash capacity, MLC NAND technology, MMC/eMMC interface, and a compact 153-VFBGA 11.5mm × 13mm package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical instruments, IoT gateways, and smart devices. The MTFC8GAKAJCN-4M IT provides reliable managed NAND storage with simplified system integration, industrial temperature operation, and dependable Micron embedded memory performance.

KHBB84A03B-MC1J is a 24GB HBM3E High Bandwidth Memory device manufactured by Samsung. Featuring a wide HBM interface, advanced stacked DRAM architecture, and high-speed HBM3E performance, it is designed for AI accelerators, data center GPUs, high-performance computing systems, machine learning servers, advanced compute ASICs, and cloud acceleration platforms. The KHBB84A03B-MC1J delivers high memory bandwidth, compact integration, and reliable Samsung HBM technology for next-generation AI and data center hardware.

KHBBC4B03C-MC1K is a 36GB HBM3E High Bandwidth Memory device manufactured by Samsung. Featuring 9.2Gbps speed, high-capacity stacked DRAM architecture, and an advanced HBM interface, it is designed for AI accelerators, data center GPUs, high-performance computing systems, machine learning servers, and advanced compute ASICs. The KHBBC4B03C-MC1K delivers extreme bandwidth, compact integration, and reliable Samsung HBM3E memory performance for next-generation AI and data center platforms.

K4AAG165WA-BCWE is a 16Gb DDR4 SDRAM memory chip manufactured by Samsung. Featuring a 1G × 16 organization, DDR4-3200 / 3200Mbps speed grade, 1.2V low-power operation, and compact 96-ball FBGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, servers, storage systems, and high-performance consumer electronics. The K4AAG165WA-BCWE delivers high-density Samsung DDR4 memory performance for compact, reliable, and bandwidth-demanding electronic designs.

KLMCG1RCTE-B041 is a 64GB eMMC 5.1 embedded flash memory device manufactured by Samsung. Integrating NAND Flash memory and a dedicated eMMC controller in a compact 153-ball package, it provides reliable managed storage for embedded computing platforms, industrial terminals, smart devices, consumer electronics, IoT gateways, and mobile systems. The KLMCG1RCTE-B041 simplifies system storage design by providing built-in flash management, broad eMMC interface compatibility, compact PCB integration, and dependable Samsung embedded memory performance.

K4B2G1646F-BCNB is a 2Gb DDR3 SDRAM memory chip manufactured by Samsung. Featuring a 128M × 16 organization, DDR3-2133 performance, 1.5V operating voltage, and a compact 96-ball FBGA package, it is widely used in embedded computing platforms, industrial automation systems, networking equipment, medical devices, and consumer electronics. The K4B2G1646F-BCNB delivers reliable high-speed DDR3 memory performance, low system complexity, and excellent compatibility for a wide range of embedded and industrial applications.

K4F6E3S4HM-THCL is a 16Gb LPDDR4 SDRAM memory device manufactured by Samsung. Featuring a 512M × 32 organization, up to 4266 Mbps performance, low-power LPDDR4 architecture, and a compact 200-ball FBGA package, it is designed for automotive electronics, AI edge devices, industrial embedded systems, networking equipment, smart cameras, and advanced mobile platforms. The K4F6E3S4HM-THCL delivers high bandwidth, low power consumption, and reliable operation for next-generation embedded and intelligent computing applications.

K4A4G085WF-BCTD is a 4Gb DDR4 SDRAM memory chip manufactured by Samsung. Featuring a 512M × 8 organization, 2666Mbps data rate, 1.2V low-power operation, and compact 78-ball FBGA package, it is suitable for DDR4 memory modules, desktop computers, laptops, embedded systems, networking equipment, industrial control devices, and consumer electronics. The K4A4G085WF-BCTD delivers reliable Samsung DDR4 performance for compact and cost-effective memory designs.

K4AAG085WA-BIWE is a 16Gb DDR4 SDRAM memory chip manufactured by Samsung. Featuring a 2G × 8 organization, 1.2V low-power operation, and compact FBGA-78 package, it is suitable for DDR4 memory modules, servers, desktop computers, laptops, networking equipment, industrial computers, and embedded systems. The K4AAG085WA-BIWE provides high-density DRAM performance, efficient power consumption, and reliable Samsung memory technology for modern computing platforms.

K4FBE3D4HM-THCL is a 32Gb LPDDR4 SDRAM memory device manufactured by Samsung. Featuring a 2-channel x16 architecture, 4266Mbps data rate, 200-ball FBGA package, and -40°C to +105°C extended temperature operation, it is designed for automotive infotainment systems, ADAS modules, embedded computing platforms, AI vision devices, industrial terminals, and smart mobile electronics. The K4FBE3D4HM-THCL delivers high memory bandwidth, low power consumption, compact integration, and reliable performance for modern automotive and embedded applications.

H5AN4G6NBJR-UHI is a 4Gb DDR4 SDRAM memory chip manufactured by SK hynix. Featuring a 256M × 16 organization, DDR4-2400 speed grade, 1.2V low-power operation, and compact FBGA-96 package, it is designed for industrial control systems, embedded computing platforms, networking equipment, consumer electronics, and long-life electronic devices. The H5AN4G6NBJR-UHI delivers reliable memory performance, efficient power consumption, and stable DDR4 bandwidth for modern embedded and industrial applications.

H5AN8G8NCJR-XNC is an 8Gb DDR4 SDRAM memory chip manufactured by SK hynix. Featuring a 1G × 8 organization, 3200 MT/s data rate, and 1.2V low-power operation, it delivers high-speed and energy-efficient memory performance for servers, desktop computers, networking equipment, industrial systems, and embedded applications. With its FBGA-78 package and advanced DDR4 architecture, the H5AN8G8NCJR-XNC provides reliable, scalable, and cost-effective memory solutions for modern computing platforms.

H5CG46MEBDX015N is a 16Gb DDR5 SDRAM memory chip manufactured by SK hynix. Featuring a 1G × 16 organization, 4800 MT/s data rate, and 1.1V low-power operation, it delivers high bandwidth and energy-efficient performance for servers, cloud computing infrastructure, AI systems, networking equipment, and high-performance embedded applications. Designed for next-generation computing platforms, the H5CG46MEBDX015N provides the speed, density, and reliability required by modern memory-intensive workloads.

H9TQ26ADFTACUR-KUM is a high-density eMCP memory solution from SK hynix that integrates 32GB eMMC 5.1 NAND Flash storage and 3GB LPDDR3 DRAM into a compact BGA221 package. Designed for smartphones, tablets, IoT devices, industrial embedded systems, and smart consumer electronics, it delivers excellent performance, low power consumption, and reduced PCB complexity. The H9TQ26ADFTACUR-KUM enables manufacturers to simplify system design while providing reliable storage and memory performance for modern embedded applications.

LQFP-48(7x7) Microcontrollers ROHS

DIODE ARRAY GP 75V 300MA SOT23-3.Diode Array 1 Pair Series Connection 75 V 300mA (DC) Surface Mount TO-236-3, SC-59, SOT-23-3

1A 4ns 100V 1.25V@150mA 200mA SOT-23 Single Diodes RoHS

100 V Switching Diode, dual, series

The IS43/46LQ32256A and IS43/46LQ32256AL are 8Gbit CMOS LPDDR4 SDRAM. The device is organized as 2 channels and each channel is 8-banks and 16-bits. This product uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.

SDRAM - Mobile LPDDR4X Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

IC FANOUT DIST 32LFCSP.Fanout Distribution, Fractional N, Integer N, Clock/Frequency Synthesizer (RF) IC 4.4GHz 1 32-VFQFN Exposed Pad, CSP

High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy. DDR4 8Gb x 8 1.2V 1.333GHz 0°C~85°C FBGA-78

IMU (inertial measurement unit) with machine learning core and finite state machine with digital output for industrial applications ST’s family of MEMS sensor modules leverages the robust and mature manufacturing processes already used for the production of micromachined accelerometers and gyroscopes. The various sensing elements are manufactured using specialized micromachining processes, while the IC interfaces are developed using CMOS technology that allows the design of a dedicated circuit which is trimmed to better match the characteristics of the sensing element. In the ISM330DHCX the sensing elements of the accelerometer and of the gyroscope are implemented on the same silicon die, thus guaranteeing superior stability and robustness. The ISM330DHCX has a full-scale acceleration range of ±2/±4/±8/±16 g and a wide angular rate range of ±125/±250/±500/±1000/±2000/±4000 dps that enable its usage in a broad range of applications. All the design aspects and the calibration of the ISM330DHCX have been optimized to reach superior accuracy, stability, extremely low noise and full data synchronization. An unmatched set of embedded features (Machine Learning Core, programmable FSM, FIFO, sensor hub, event decoding and interrupts) are enablers for implementing smart and complex sensor nodes which deliver high performance at very low power. The ISM330DHCX is available in a 14-lead plastic land grid array (LGA) package.

BOARD EVAL FOR MPU-6000

IMU ACCEL/GYRO I2C/SPI 24QFN.Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output

256KB 256K x 8 FLASH ARM® Cortex®-M0+ 32-Bit Microcontroller S32K Series 5V 64-LQFP

Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series

IC MCU 32BIT 128KB FLASH 80LQFP.ARM® Cortex®-M0+ Kinetis KEA Microcontroller IC 32-Bit Single-Core 48MHz 128KB (128K x 8) FLASH 80-LQFP (14x14)

IC MCU 32BIT 512KB FLASH 100LQFP.ARM® Cortex®-M4F S32K Microcontroller IC 32-Bit Single-Core 80MHz 512KB (512K x 8) FLASH 100-LQFP (14x14)

384KB 384K x 8 FLASH ARM® Cortex®-R4 16/32-Bit Microcontroller Automotive, AEC-Q100, Hercules? TMS570 ARM® Cortex®-R Series 5700432 100 Pin 80MHz 1.2V 100-LQFP