Hot Electronic Components – In Stock & Ready to Ship

The IS43/46LQ32256A and IS43/46LQ32256AL are 8Gbit CMOS LPDDR4 SDRAM. The device is organized as 2 channels and each channel is 8-banks and 16-bits. This product uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.

SDRAM - Mobile LPDDR4X Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

IC FANOUT DIST 32LFCSP.Fanout Distribution, Fractional N, Integer N, Clock/Frequency Synthesizer (RF) IC 4.4GHz 1 32-VFQFN Exposed Pad, CSP

IMUs - Inertial Measurement Units 6-Axis MEMS Motion Tracking Device Low Power 6-Axis MotionTracking Device

High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy. DDR4 8Gb x 8 1.2V 1.333GHz 0°C~85°C FBGA-78

IMU (inertial measurement unit) with machine learning core and finite state machine with digital output for industrial applications ST’s family of MEMS sensor modules leverages the robust and mature manufacturing processes already used for the production of micromachined accelerometers and gyroscopes. The various sensing elements are manufactured using specialized micromachining processes, while the IC interfaces are developed using CMOS technology that allows the design of a dedicated circuit which is trimmed to better match the characteristics of the sensing element. In the ISM330DHCX the sensing elements of the accelerometer and of the gyroscope are implemented on the same silicon die, thus guaranteeing superior stability and robustness. The ISM330DHCX has a full-scale acceleration range of ±2/±4/±8/±16 g and a wide angular rate range of ±125/±250/±500/±1000/±2000/±4000 dps that enable its usage in a broad range of applications. All the design aspects and the calibration of the ISM330DHCX have been optimized to reach superior accuracy, stability, extremely low noise and full data synchronization. An unmatched set of embedded features (Machine Learning Core, programmable FSM, FIFO, sensor hub, event decoding and interrupts) are enablers for implementing smart and complex sensor nodes which deliver high performance at very low power. The ISM330DHCX is available in a 14-lead plastic land grid array (LGA) package.

BOARD EVAL FOR MPU-6000

IMU ACCEL/GYRO I2C/SPI 24QFN.Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output

256KB 256K x 8 FLASH ARM® Cortex®-M0+ 32-Bit Microcontroller S32K Series 5V 64-LQFP

Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series

IC MCU 32BIT 128KB FLASH 80LQFP.ARM® Cortex®-M0+ Kinetis KEA Microcontroller IC 32-Bit Single-Core 48MHz 128KB (128K x 8) FLASH 80-LQFP (14x14)

IC MCU 32BIT 512KB FLASH 100LQFP.ARM® Cortex®-M4F S32K Microcontroller IC 32-Bit Single-Core 80MHz 512KB (512K x 8) FLASH 100-LQFP (14x14)

384KB 384K x 8 FLASH ARM® Cortex®-R4 16/32-Bit Microcontroller Automotive, AEC-Q100, Hercules? TMS570 ARM® Cortex®-R Series 5700432 100 Pin 80MHz 1.2V 100-LQFP

ATSAME70Q20

ATSAME70Q21

Logic IC Output Optocoupler, 1-Element, 3750V Isolation, SOP-6

15Mbps 2.7V~5.5V DC SO-5 Logic Output Optoisolators ROHS

Macronix Serial Multi I/O (MXSMIO™) Flash provides not only Single I/O, but also Multi-I/O interfaces. MX66xxx35 or MX25xxx33/35/39/73/75 series offering Dual I/O or Quad I/O operations which double or quadruple the read performance of systems for high-end consumer applications.

The Samsung KLMAG1JETD-B041 is a 16GB eMMC 5.1 NAND flash memory chip in a 153-ball FBGA package, commonly used for high-speed, reliable data storage in embedded systems, mobile devices, and IoT applications. It operates at 1.8V/3V with a 200MHz max frequency, supporting high-speed data transfer.

DDR5 ushers indata-centric innovation

DDR5 ushers indata-centric innovation

Versatile LPDRAM for mobile solutions

Standalone 3 to 8 Cell Li-Ion Battery Pack Monitor

BQ27441DRZR-G1A ACTIVE System-side Impedance Track™ battery fuel (gas) gauge | DRZ | 12 | -40 to 85

High-side driver with MultiSense analog feedback for automotive applications.

IC PFC CTL CCM ADJUSTABL 20TSSOP.PFC IC Continuous Conduction (CCM) Adjustable 20-TSSOP

C2000™ 32-bit MCU with 800 MIPS, 2xCPU, 2xCLA, FPU, TMU, 1024 KB flash, CLB, EMIF, 16b ADC | ZWT | 337 | -40 to 105

Automotive C2000™ 32-bit MCU with 150 MIPS, FPU, 512 KB flash, EMIF, 12b ADC | ZJZ | 176 | -40 to 125

Automotive C2000™ 32-bit MCU with 150 MIPS, FPU, 512 KB flash, EMIF, 12b ADC | PTP | 176 | -40 to 125

C2000™ 32-bit MCU with 150 MIPS, FPU, 256 KB flash, EMIF, 12b ADC

IC MCU 32BIT 128KB FLASH 64TQFP.C28x C2000™ C28x Piccolo™ Microcontroller IC 32-Bit Single-Core 60MHz 128KB (64K x 16) FLASH 64-TQFP (10x10)

Specialized Interface IC

Micron LPDDR5 DRAM for Mobile Devices and Artificial Intelligence (AI) is designed to meet the demands of 5G networks. The DRAM modules enable 5G smartphones to process data at peak speeds of up to 6.4Gbps, which is crucial for preventing 5G data bottlenecks. The LPDDR5 DRAM addresses these requirements with a 50% increase in data access speeds. The devices also provide more than 20% power efficiency compared with previous generations. Micron and Motorola collaborated to enable the Edge+ to reach 5G network speeds for maximum processing power and high bandwidth memory and storage. Motorola Edge+ delivers a smooth, lag-free consumer experience with 12GB of Micron LPDDR5 DRAM memory. The phones take advantage of faster data speeds and lower 5G latency to increase the performance of cloud-based applications like gaming and streaming.

Micron DDR5 SDRAM enables server workloads by delivering more than an 85% increase in memory performance. These modules increase bandwidth performance gains in data centers that require the performance advantages of DDR5 to maintain available bandwidth per CPU core. Micron DDR5 SDRAM, along with the additional compute, are instrumental in extracting value and insight from the mounds of data being generated today.

ARM® Cortex®-A53 Microprocessor i.MX8MQ Series 621-FBGA, FCBGA

DGTL ISOLTR 3KV 2CH GP 8-SOIC.General Purpose Digital Isolator 3000Vrms 2 Channel 100Mbps 85kV/µs CMTI 8-SOIC (0.154", 3.90mm Width)

Power Management Specialized - PMIC 15A/30A DC/DC POWER MODULE

DC DC Voltage Regulator 1 Outputs

Switching Voltage Regulators Stand alone 10A DC/DC step down power supply Module, 15 X 15

36V, 16-bit, ultra-precise i2c output current/voltage/power monitor w/alert | DGS | 10 | -40 to 125

ARM Cortex-M4 168MHz 114 LQFP-144(20x20) Microcontrollers RoHS The GD32F407ZGT6 is a top-tier high-performance microcontroller from GigaDevice's GD32F4 series, built on the Arm® Cortex®-M4 core operating at 168MHz with hardware FPU and DSP acceleration. It offers maximum memory configuration (1MB Flash, 192KB SRAM) and integrates an Ethernet MAC, USB 2.0 OTG, dual CAN 2.0B interfaces, and extensive I/O in an LQFP144 package. This MCU is engineered for data-intensive embedded applications requiring robust networking, large code storage, and high-speed processing, such as industrial automation, advanced IoT gateways, complex motor control, and networked consumer systems.

System-side Impedance Track™ battery fuel (gas) gauge | DRZ | 12 | -40 to 85

I2C 1cell 5A buck battery charger with high input voltage and 3.1-A boost with HVDCP enabled | RTW | 24 | -40 to 85

24-bit, 2-kSPS, eight-channel delta-sigma ADC for precision sensor measurement | PW | 28 | -40 to 125

8-Channel, Low Noise, Low Power, 24-Bit, Sigma-Delta ADC with PGA and Reference

1mm Specialized Interface IC 324 Pin 1V FCBGA