Hot Electronic Components – In Stock & Ready to Ship

RF RCVR GNSS/GPS 1.575GHZ 24LCC GNSS / GPS Modules u-blox M8 GNSS module Automotive dead reckoning,onboard sensor LCC, 12x16 mm, 250 pcs/reel

W9825G6KH-6 is a 256Mbit SDR SDRAM memory IC from Winbond, organized as 4M × 4 banks × 16 bits and supplied in a 54-TSOP II package. With a 166MHz parallel SDRAM interface, 3.0V to 3.6V supply voltage, and 5ns access time, it is suitable for embedded systems, consumer electronics, industrial control boards, networking equipment, FPGA/DSP systems, and legacy SDRAM replacement applications.

H5ANAG8NCJR-XNC is a 16Gb DDR4 SDRAM memory IC from SK hynix, organized as 2G × 8 and supplied in a 78-ball FBGA package. With DDR4-3200 class performance, 1.2V operation, and high-density memory architecture, it is suitable for DDR4 memory modules, servers, workstations, industrial computers, networking equipment, storage systems, and embedded processor platforms.

MT25QL128ABA1ESE-0SIT is a 128Mbit Serial NOR Flash memory IC from Micron Technology, featuring a SPI / Quad I/O interface, 133MHz maximum clock frequency, 2.7V to 3.6V supply voltage, and industrial temperature operation. It is suitable for firmware storage, boot code, execute-in-place applications, embedded systems, industrial controllers, networking equipment, and MCU/FPGA-based designs.

4RCD0229KB1ATG8 is a Renesas / IDT DDR4 Registering Clock Driver designed for DDR4 RDIMM and LRDIMM memory modules. It provides a 32-bit 1:2 registered command/address buffer with parity, operates from a 1.2V supply, and is supplied in a 253-ball FCCSPBGA package. It is mainly used in server memory modules, data center platforms, enterprise storage systems, and high-reliability computing equipment.

K4A8G085WC-BCTD is an 8Gbit DDR4 SDRAM memory IC from Samsung, organized as 1G × 8 and supplied in a 78-ball FBGA package. With DDR4-2666 class performance and 1.2V operation, it is suitable for PC memory modules, laptops, industrial computers, networking equipment, servers, embedded systems, and other high-speed memory applications.

MT53D1024M32D4DT-046 AAT:D is a 32Gb LPDDR4 SDRAM from Micron Technology, organized as 1G × 32 and supplied in a 200-ball VFBGA package. With high-speed 2.133GHz operation, low-voltage 1.1V / 0.6V power rails, and a -40°C to +105°C operating temperature range, it is suitable for automotive electronics, industrial embedded systems, AIoT devices, communication equipment, and high-performance SoC-based platforms.

MT29F2G08ABAGAWP-IT:G is a 2Gbit SLC NAND Flash memory IC from Micron Technology, organized as 256M × 8 and supplied in a 48-pin TSOP-I package. With a parallel NAND interface, 2.7V to 3.6V supply voltage, and -40°C to +85°C operating temperature range, it is suitable for embedded systems, industrial controllers, networking equipment, consumer electronics, automotive electronics, and other applications requiring reliable non-volatile storage.

NT5CC128M16IP-DI is a 2Gb DDR3L SDRAM memory IC from Nanya Technology, organized as 128M × 16 and supplied in a 96-ball BGA package. It supports DDR3L-1600 performance, low-voltage operation, and industrial temperature use, making it suitable for embedded systems, industrial controllers, networking equipment, consumer electronics, and high-speed data-buffering applications.

The K4ZAF325BC-SC20 is a high-performance GDDR6 Graphics Memory (VRAM) chip manufactured by Samsung. This specific component has gained significant attention in the hardware community because it is used in the Sony PlayStation 5 Pro (PS5 Pro) and certain high-end graphics cards (such as the Gigabyte GeForce RTX 4060 Ti AERO OC 16GB).

18-Bit, 240SPS, Single Channel ADC Analog to Digital Converters - ADC 18-B delta-sigma ADC Sngl Ch 4sps

RS-485 Transceiver with Integrated Transient Voltage Suppression | D | 8 | -40 to 85 IC TRANSCEIVER HALF 1/1 8SOIC

W25Q64JVSSIG by Winbond Electronics Corp is a Flash Memory. Flash Memories are under the broader part category of Memory Components.

IC FLASH 64MBIT SPI/QUAD 8SOIC.FLASH - NOR Memory IC 64Mbit SPI - Quad I/O 133 MHz 8-SOIC NOR Flash spiFlash, 64M-bit, 4Kb Uniform Sector FLASH - NOR Memory IC 64Mbit SPI - Quad I/O 133 MHz 8-SOIC

IC TRANSCEIVER HALF 1/1 8SOIC.1/1 Transceiver Half RS422, RS485 8-SOIC 3.3V Low Power Half-Duplex RS-485 Transceivers with 10Mbps Data Rate

Schottky Barrier Diode

Ultra low capacitance double rail-to-rail ESD protection diode

DRAM DDR4 16G 1GX16 FBGAIT IC DRAM 16GBIT PARALLEL 96FBGA

MTFDKBZ3T8TFR-1BC1ZABYY Solid State Drives - SSD 7450 4TByte E1.S 32x111x5.9

Samsung KLM8G1GETF-B041: MLC NAND Flash Serial e-MMC 3V/3.3V 64G-bit 64G/16G/8G x 1/4-bit/8-bit 153-Pin FBGA. With superior power efficiency and noticeably fast speed, Samsung’s eMMC is the definitive choice for flash storage to develop slim mobile design.

Translation - Voltage Levels Low power HDMI/DVI level shifter IC INTFACE SPECIALIZED 32HVQFN

NPN -65°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Cut Tape (CT) Surface Mount

Single, 30-V, 1-MHz operational amplifier | DBV | 5 | -40 to 85 Operational Amplifiers - Op Amps LOW PWR SGL OP AMP A 926-LM321MF/NOPB A A 926-LM321MF/NOPB

QFN-32(5x5) Microcontrollers ROHS

CMC 150MA 2LN 90 OHM SMD.2 Line Common Mode Choke Surface Mount 90 Ohms @ 100 MHz 150mA DCR 1.75Ohm

4.5 V to 17 V input, 3 A output, synchronous step-down converter in Eco-mode | DDC | 6 | -40 to 125 Switching Voltage Regulators 4.5 V to 17 V input 3 A output synchro A A 595-TPS563201DDCT

3-s to 16-s high-accuracy battery monitor and protector for Li-ion, Li-polymer and LiFePO4 | PFB | 48 | -40 to 85

High-Precision 6-Axis MEMS MotionTracking® Device 6-Axis High performance IMU supporting highly accurate external clock input, that helps to reduce system level sensitivity error, improve orientation measurement from gyroscope data, reduce ODR sensitivity to temperature and device to device variation. The ICM-42688-P is a 6-axis MEMS MotionTracking device that combines a 3-axis gyroscope and a 3-axis accelerometer. It has a configurable host interface that supports I3C℠, I²C, and SPI serial communication. It features a 2 kB FIFO and 2 programmable interrupts with ultra-low-power wake-on-motion support to minimize system power consumption. ICM-42688-P supports highly accurate external clock input, that helps to reduce system level sensitivity error, improve orientation measurement from gyroscope data, reduce ODR sensitivity to temperature and device to device variation. The device includes industry first 20-bits data format support in FIFO for high-data resolution. This FIFO format encapsulates 19-bits of gyroscope data and 18-bits of accelerometer data. Other industry-leading features include InvenSense on-chip APEX Motion Processing engine for gesture recognition, activity classification, pedometer, programmable digital filters, and an embedded temperature sensor. The device supports a VDD operating range of 1.71V to 3.6V, and a separate digital IO supply, VDDIO from 1.71V to 3.6V.

Cyclone® IV E Field Programmable Gate Array (FPGA) IC 179 276480 6272 256-LBGA FPGA - Field Programmable Gate Array

0.1°C digital temperature sensor, 48-bit EEPROM, PT100/PT1000 RTD replacement | DRV | 6 | -55 to 150

NOR Flash SPI 128Mbit 4 3 Volts 8/8 WPDFN 1 MT25QL128ABA is a high performance multiple input/output, 128Mb, 3V, SPI Flash memory device.

MOSFET (Metal Oxide) N-Channel Tube 5.9m ? @ 103A, 10V ±30V 10470pF @ 50V 227nC @ 10V TO-247-3