Interface ICs

Numonyx P33-65nm Single Bit per Cell (SBC) Flash Memory with 64-Mbit and 128-Mbit densities.

The Micron Parallel NOR Flash memory is the latest generation of Flash memory devices.

Micron Parallel NOR Flash Embedded Memory (P33-65nm) with densities of 256Mb and 512Mb.

64Mb, 3V, Multiple I/O Serial Flash Memory

Legacy Fab-13 NOR Flash

Alliance Memory is a supplier of legacy memory products

16Mb (2Mb x 8) SPI Flash memory with 75 MHz clock frequency, 2.7-3.6V supply, page-erasable with byte alterability.

Micron Parallel NOR Flash Embedded Memory with Top/Bottom Boot Block 5V Supply.

Micron Parallel NOR Flash Embedded Memory with Top/Bottom Boot Block 5V Supply.

Micron Parallel NOR Flash Memory with Top/Bottom Boot Block, 5V supply, supporting READ, ERASE, and PROGRAM operations.

M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvolatile memory device with READ, ERASE, and PROGRAM operations using a single low-voltage (4.5–5.5V) supply.

The M25P80 is an 8Mb (1Mb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high speed SPI-compatible bus.

The M25P10A is a 1Mb (125Kb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high-speed SPI-compatible bus.

256-Kbit (32 K × 8) high-performance CMOS static RAM

3.3 V 256 K × 16 CMOS SRAM

3.3 V 256 K × 16 CMOS SRAM

The AS7C3256A is a 3.3V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device organized as 32,768 words × 8 bits.

5V 32K x 8 CMOS SRAM (Common I/O)

The AS7C256B is a 5V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device organized as 32,768 words × 8 bits.

AS6C4016 is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits.

512K X 8 BIT LOW POWER CMOS SRAM

The AS6C4008 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits, fabricated using very high performance, high reliability CMOS technology.

256Mb high-speed CMOS synchronous DRAM with 4 banks of 2M word x 32 configuration

256Mb high-speed CMOS synchronous DRAM, 4 banks of 2M x 32-bit, synchronous interface.

512M (64M x 8 bit) DDR2 Synchronous DRAM (SDRAM) containing 512 Mbits in an 8-bit wide data I/Os.

512Mb DDR2 SDRAM with 8-bit wide data I/Os, internally configured as 4 banks of 16Mx8.

8Gb DDR4 SDRAM with 1.2V pseudo open-drain interface, available in 78-ball and 96-ball FBGA packages.

8Gbit DDR3L SDRAM organized as 8 banks of 64Mbit x 16 in a 96-ball FBGA package. Features double-data-rate architecture with differential data strobe and operates at 1.35V with 1.5V compatibility.

8Gb: x4, x8, x16 DDR3L SDRAM

8Gb: x4, x8, x16 DDR3L SDRAM

4M x 32 bit Synchronous DRAM (SDRAM) with 128 Mbits capacity, high-speed CMOS synchronous interface.

128Mb (4M x 32) Synchronous DRAM (SDRAM) with 166/143 MHz operation, 5.4 ns access time, and LVTTL interface.

128Mb DDR SDRAM with 1M x 32 organization per bank, 4 banks, synchronous interface, and 200 MHz clock rate.

64M – (4M x 16 bit) Synchronous DRAM (SDRAM)

64M – (4M x 16 bit) Synchronous DRAM (SDRAM)

64M – (4M x 16 bit) Synchronous DRAM (SDRAM)

512-Mbit Synchronous DRAM with four banks, available in TSOP II package.

512-Mbit Synchronous DRAM with 133 MHz clock rate, available in 54/86-pin TSOP II packages.

The AS4C32M16SB is a 512Mb high-speed CMOS synchronous DRAM (SDRAM) organized as 4 banks of 8M words x 16 bits, featuring a synchronous interface and fast access times.

The 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

512Mb high-speed CMOS synchronous DRAM with 512 Mbits, internally configured as 4 Banks of 8M word x 16.

AS4C32M16D2A-25BIN is a high-speed CMOS Double-Data-Rate-Two (DDR2), synchronous dynamic random-access memory (SDRAM) containing 512 Mbits in a 16-bit wide data I/Os.

32M x 16 bit DDR2 Synchronous DRAM (SDRAM)

512M (32M x 16 bit) DDR2 Synchronous DRAM (SDRAM)

AS4C32M16D2 512M (32M x 16 bit) DDRII Synchronous DRAM (SDRAM)

AS4C32M16D1 is a 32M x 16 bit DDR Synchronous DRAM (SDRAM) with 512 Mbits capacity, featuring a 60-Ball TFBGA package and 200MHz clock rate.

4Gb DDR3 SDRAM, 32Mx16 organization, 96-ball FBGA package, 1.5V power supply, 1600Mbps data rate.

4Gb DDR3 SDRAM with 32Mx16 organization, 96-ball FBGA package, and 1600Mbps data rate.

512Mb (16M x 32) Low Power SDRAM with LVCMOS I/O interface, 90-ball FBGA package, and standard SDRAM functionality.

512Mb (16M x 32) Low Power SDRAM with LVCMOS I/O interface, 90-ball FBGA package, and industrial temperature range.