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512Mb SDRAM with 536,870,912 bits, internally configured as a quad-bank DRAM with synchronous interface.

512Mb SDRAM with 536,870,912 bits, internally configured as a quad-bank DRAM with synchronous interface.

128Mb x32 SDRAM with PC100 compliance, fully synchronous operation, internal pipelined operation, and programmable burst lengths.

The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits.

512Mb SDRAM with x4, x8, x16 configurations, quad-bank, synchronous interface, and pipelined operation.

The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface.

512Mb SDRAM, high-speed CMOS, dynamic random-access memory, 536,870,912 bits, quad-bank DRAM, synchronous interface.

512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits, internally configured as a quad-bank DRAM with a synchronous interface.

The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits.

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

256Mb SDRAM with x4, x8, x16 configurations, high-speed CMOS, dynamic random-access memory with synchronous interface and quad-bank DRAM.

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface.

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits, internally configured as a quad-bank DRAM with a synchronous interface.

512Mb DDR SDRAM with x4, x8, x16 configurations, featuring double data rate architecture for high-speed operation.

16GB, eMMC 51, 3V, Industrial Grade, 153ball FBGA Package (115x13mm)

4Mb, SRAM, 256K x 16, 5V, 44pin TSOP II, 12ns, Industrial Temp, A Die, T&R

8Mb, SRAM, 1024K x 8, 33V, 44pin TSOP II, 10ns, Industrial Temp, A Die

256K, SRAM, 32K x 8, 33V, 28pin TSOP I, 15ns, Industrial Temp, A Die, T&R

256K, SRAM, 32K x 8, 33V, 28pin SOJ, 15ns, Industrial Temp, A Die

2Mb, SRAM, 128K x 16, 44pin TSOP II, 15ns, Industrial Temp, A Die

16Mb, SRAM, 1024K x 16, 33V, 54pin TSOP II, 10ns, Industrial Temp, B Die, T&R

256K, SRAM, 32K x 8, 5V, 28pin SOJ, 12ns, Industrial Temp, A Die

1Mb, SRAM, 64K x 16, 5V, 44pin TSOP II, 20ns, Commercial Temp, B Die

LP SRAM, 4Mb (x16) 27V-36V , 45ns, 48ball TFBGA, Industrial Grade with ECC, revB, T&R

LPSRAM with ECC, 1Mb(64K x 16),27V-36V, 44pin TSOP II, Industrial, A Die,T&R

LP SRAM, 8Mb, 512K x 16, 27 - 36V, 44pin TSOP II, 45ns, Industrial Temp, B Die

LP SRAM, 8Mb, 512K x 16, 27 - 36V, 48ball TFBGA (6x8mm) (two chip select pins:B5 and A6), 45ns, Industrial Temp, B Die

8Mb, LP SRAM, 1M x 8, 27 - 55V, 44pin TSOP II, 55ns, Industrial Temp, B Die, T&R

8Mb, LP SRAM, 1M x 8, 27 - 55V, 44pin TSOP II, 55ns, Industrial Temp, B Die

8Mb, LP SRAM, 1M x 8, 27 - 55V, 44pin TSOP II, 45ns, Industrial Temp, B Die

64M LOW POWER 408K X 16 3V 48PIN TSOP I INDUSTRIAL TEMP

16Mb, LP SRAM, 1M x 16, 27 - 36V, 48pin TSOP I (12 x 20mm), 45ns, Industrial Temp, B Die

LLP SRAM, 1Mb, 128K x 8, 27 - 55V, 32pin STSOP (8 x 134mm), 55ns, Industrial Temp, T&R

SDR, 256Mb, 8M X 32, 33V, 90ball FBGA, 143 MHz, Commercial Temp, A Die,T&R

SDR, 128Mb, 8M x 16, 33V, 54ppin BGA, 143 Mhz, commercial Temp(63), T&R, A Die

SDR, 128Mb, 8M x 16, 33V, 54ball BGA, 166 Mhz, A Die

DDR1, 128Mb, 8M x 16, 25V, BGA, 200Mhz, Commercial Temp, T&R

DDR1, 512Mb, 64M x 8, 25V, 66pin TSOPII, 200MHz, Commercial Temp

DDR3, 1G, 64M X 16, 135V, 96BALL FBGA, 800MHZ, INDUSTRIAL TEMP, T&R, C Die

DDR3, 1G, 64M x 16, 15V, 96ball FBGA, 800MHz, Industrial Temp BDIE

DDR1, 64Mb, 4M x 16, 25V, 66pin TSOP II, 200 MHz, Industrial Temp(A) Tape and Reel

64Mb, DDR1, 4M x 16, 25V, 66pin TSOP II, 200 MHz, Commercial Temp(A), T&R

64Mb, DDR1, 4M x 16, 25V, 66pin TSOP II, 200 MHz, Automotive Temp(A), T&R

SDR, 256M, 32M X8, 33V, 54 PIN TSOP II 166MHZ INDUSTRIAL TEMP, A Die

DDR3, 512Mb, 32M x 16, 15V, 96ball FBGA, 800 MHz, Commercial Temp, T&R

DDR2, 512Mb, 32M x 16, 18V, 84ball BGA, 400 MHz, Commercial Temp, Tape & Reel, C Die

DDR2, 512Mb, 32M x 16, 18V, 84ball BGA, 400 MHz, Commercial Temp, A Die

DDR1, 64MB, 2M X 32, 25V 144 BGA 200MHZ, COMMERCIAL TEMP, A Die