CYPRESS

The XC9306B05G0R-G is a synchronous buck-boost DC/DC converter IC with built-in FETs. The circuit topology switches over between buck and boost smoothly based on the relationship of the input voltage and the output voltage which is observed by the internal PWM controller.

The Cypress W134M/W134S provides the differential clock subsystem for up to 800-MHz data transfer rate signals for a Direct Rambus memory subsystem.

TT21XXX/TT31XXX TrueTouch Multi-touch All-points Touchscreen Controllers with 40, 44, 48 I/Os

The Cypress STK11C88 is a 256 Kb fast static RAM with a nonvolatile element in each memory cell.

2 Gbit, 3V Page Mode MirrorBit Flash device with 25 ns page access time and 110 ns random access time.

32-bit ARM Cortex-M0+ FM0+ Microcontroller

Integrated transceiver ICs for automotive CXPI communication network with flexible bit rate and compliance to JASO, SAE, and ISO standards.

1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded

Spansion® SLC NAND Flash Memory for Embedded with 1 Gb, 2 Gb, 4 Gb densities, 1-bit ECC, x8 and x16 I/O, and 1.8V VCC.

The Cypress S34ML08G1 8-Gb NAND is offered in 3.3 V with x8 I/O interface.

Spansion SLC NAND Flash Memory for Embedded with 1 Gb, 2 Gb, 4 Gb densities, 4-bit ECC, x8/x16 I/O, 3V VCC.

The Cypress S34ML08G1 8-Gb NAND is offered in 3.3 V with x8 I/O interface.

The Cypress S34MS01G1, S34MS02G1, and S34MS04G1 series is offered in 1.8 V and V power supply, and with x8 or x16 I/O interface.

1Gb, 2 Gb, 4 Gb, 1.8 V, 1-bit ECC, SLC NAND Flash Memory for Embedded

SkyHigh S34ML16G2 16-Gb NAND is offered in 3.3 V with ×8 I/O interface.

The Cypress® S34ML08G2 8-Gb NAND is offered in 3.3 V with x8 I/O interface.

8 Gb, 4-bit ECC, x8 I/O and 3 V VCC NAND Flash Memory for Embedded

8 Gb NAND Flash Memory with x8 I/O interface, 3.3 V operation, for embedded applications.

The Spansion® S34ML08G1 8-Gb NAND is offered in 3.3 V with x8 I/O interface.

The Spansion® S34ML08G1 8-Gb NAND is offered in 3.3 V with x8 I/O interface.

3.3-V NAND Flash Memory for Embedded with x8/x16 I/O interface.

1Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded

S34ML01G2, S34ML02G2, S34ML04G2 series 1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded.

3.3-V NAND Flash memory series with x8/x16 I/O interface for embedded applications.

3.3-V SLC NAND Flash series with densities of 1 Gb, 2 Gb, and 4 Gb, featuring ×8 or ×16 I/O interface for embedded applications.

The Cypress S34ML01G1, S34ML02G1, and S34ML04G1 series is offered with a 3.3-V V power supply, and with ×8 or ×16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

3.3-V SLC NAND flash memory series with 1 Gb, 2 Gb, and 4 Gb densities, supporting ×8 or ×16 I/O interface for embedded applications.

3.3-V SLC NAND Flash series with ×8 or ×16 I/O interface for embedded solid state mass storage.

The Cypress S34ML08G1 8-Gb NAND is offered in 3.3 V with x8 I/O interface.

3.3-V NAND Flash memory series with x8/x16 I/O interface for embedded applications.

8 Gb NAND Flash Memory with x8 I/O interface, 3.3 V operation.

3.3-V SLC NAND Flash series with ×8 or ×16 I/O interface for embedded applications.

Spansion® SLC NAND Flash Memory for Embedded with 1 Gb, 2 Gb, 4 Gb densities, 1-bit ECC, x8/x16 I/O, 3V VCC

The Cypress S34ML01G1, S34ML02G1, and S34ML04G1 series is offered with a 3.3-V V power supply, and with ×8 or ×16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The Cypress S34ML01G1, S34ML02G1, and S34ML04G1 series is offered with a 3.3-V V power supply, and with ×8 or ×16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

S34ML01G2, S34ML02G2, S34ML04G2 series 1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded.

3.3V NAND Flash Memory series with x8/x16 I/O interface for embedded applications.

1Gb, 2 Gb, 4 Gb, 1.8 V, 1-bit ECC, SLC NAND Flash Memory for Embedded

128-/64-/32-Mbit (8/4/2M × 16-Bit), 3 V, Flash with Enhanced VersatileIO™

32-Mbit (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash memory device.

32-Mbit (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash Memory

32-Mbit (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash memory device.

The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology.

128 Mb to 1 Gb GL-S MIRRORBIT™ flash memory with parallel interface and 3.0 V core.

The S29GL01GS/512S/256S/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology.

The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology.

The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology.

The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology.

The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology.

The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology.