RFQ List
Memory IC Development Tools are hardware and software resources used to support the design, configuration, programming, and evaluation of memory integrated circuits. They provide a structured way to interface with memory devices during development and validation, helping engineers work with memory functions and device behavior in a controlled environment.
| Product | Manufacturer | In Stock Status | Price | Qty | RFQ | Description |
|---|---|---|---|---|---|---|
| Infineon | - | Check Price | Get a Quote | The Cypress STK22C48 is a fast static RAM with a nonvolatile element in each memory cell. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK17TA8 combines a 1 Mb nonvolatile static RAM (nvSRAM) with a full featured real time clock in a reliable, monolithic integrated circuit. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK17T88 combines a 256 Kb nonvolatile static RAM (nvSRAM) with a full-featured real-time clock in a reliable, monolithic integrated circuit. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK16C88 is a 256 Kb fast static RAM with a nonvolatile element in each memory cell. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK14CA8 is a 1 Mb fast static RAM with a nonvolatile QuantumTrap storage element. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK14CA8 is a 1 Mb fast static RAM with a nonvolatile QuantumTrap storage element included with each memory cell. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK14CA8 is a 1 Mb fast static RAM with a nonvolatile QuantumTrap storage element. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK14CA8 is a 1 Mb fast static RAM with a nonvolatile QuantumTrap storage element. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK14C88 is a 256 Kb fast static RAM with nonvolatile Quantum Trap storage element. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK12C68 is a fast static RAM with a nonvolatile element in each memory cell. | ||
| Infineon | - | Check Price | Get a Quote | 64 Kbit (8K x 8) AutoStore nvSRAM with fast static RAM and nonvolatile QuantumTrap technology. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK11C88 is a 256 Kb fast static RAM with a nonvolatile element in each memory cell. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress STK11C88 is a 256 Kb fast static RAM with a nonvolatile element in each memory cell. | ||
| Infineon | - | Check Price | Get a Quote | 2 Gb (256 MB) GL-T MIRRORBIT™ Flash memory device with 45-nm process technology, fast page access time of 20 ns and random access time of 110 ns. | ||
| Infineon | - | Check Price | Get a Quote | The S70GL02GT 2-Gb MIRRORBIT™ flash memory device is fabricated on 45-nm MIRRORBIT™ process technology. | ||
| Infineon | - | Check Price | Get a Quote | Spansion® SLC NAND Flash Memory for Embedded with 1 Gb, 2 Gb, and 4 Gb densities, 4-bit ECC, x8 and x16 I/O, and 3V VCC. | ||
| Infineon | - | Check Price | Get a Quote | 64 Mbit (4M x 1.8 V MirrorBit Flash memory | ||
| Infineon | - | Check Price | Get a Quote | 128-/64-/32-Mbit (8/4/2M × 16-Bit), 3 V, Flash with Enhanced VersatileIO™ | ||
| Infineon | - | Check Price | Get a Quote | S29PL-J 128-/64-/32-Mbit (8/4/2M × 16-Bit), 3 V, Flash with Enhanced VersatileIO™ | ||
| Infineon | - | Check Price | Get a Quote | 128-/64-/32-Mbit (8/4/2M × 16-Bit), 3 V, Flash with Enhanced VersatileIO™ | ||
| Infineon | - | Check Price | Get a Quote | The S29JL064J is a 64Mb, 3.0 volt-only flash memory device with simultaneous read/write operations. | ||
| Infineon | - | Check Price | Get a Quote | 64-Mb (8M × 8-Bit/4M × 16-Bit), 3 V, Simultaneous Read/Write Flash memory device. | ||
| Infineon | - | Check Price | Get a Quote | 64-Mb (8M × 8-Bit/4M × 16-Bit), 3 V, Simultaneous Read/Write Flash memory device | ||
| Infineon | - | Check Price | Get a Quote | 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash | ||
| Infineon | - | Check Price | Get a Quote | 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash | ||
| Infineon | - | Check Price | Get a Quote | 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash memory device. | ||
| Infineon | - | Check Price | Get a Quote | 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash memory device. | ||
| Infineon | - | Check Price | Get a Quote | The S29JL032J is a 32Mb, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. | ||
| Infineon | - | Check Price | Get a Quote | The S29GL01GS/512S/256S/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. | ||
| Infineon | - | Check Price | Get a Quote | The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. | ||
| Infineon | - | Check Price | Get a Quote | The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. | ||
| Infineon | - | Check Price | Get a Quote | Cypress S29GL01G/512/256/128P Mirrorbit Flash products with 90 nm process technology, offering fast page access time of 25 ns and random access time as fast as 90 ns. | ||
| Infineon | - | Check Price | Get a Quote | Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology with fast page access time of 25 ns and random access time as fast as 90 ns. | ||
| Infineon | - | Check Price | Get a Quote | 128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ Flash Parallel, 3.0 V | ||
| Infineon | - | Check Price | Get a Quote | The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. | ||
| Infineon | - | Check Price | Get a Quote | Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology, offering fast page access time of 25 ns and random access time as fast as 90 ns. | ||
| Infineon | - | Check Price | Get a Quote | 64 Mb (8 MB) GL-S MIRRORBIT™ Flash with parallel interface, 3.0 V operation. | ||
| Infineon | - | Check Price | Get a Quote | 3.0-Volt single-power Flash memory manufactured using 110nm MirrorBit technology. | ||
| Infineon | - | Check Price | Get a Quote | The Cypress S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology, offering fast page access time as fast as 15ns and random access time as fast as 90ns. | ||
| Infineon | - | Check Price | Get a Quote | The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. | ||
| Infineon | - | Check Price | Get a Quote | The S29AS016J is a 16 Mbit, 1.8 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words with a x8/x16 bus and either top or bottom boot sector architecture. | ||
| Infineon | - | Check Price | Get a Quote | 16Mb 3.0V Universal Footprint Standard Interface (AL) Parallel NOR Flash Memory | ||
| Infineon | - | Check Price | Get a Quote | 64 Mb (8 MB) FS-S Flash with SPI Multi-I/O, 1.8 V | ||
| Infineon | - | Check Price | Get a Quote | S25FS064S 64 Mbit (8 Mbyte), 1.8 V FS-S Flash | ||
| Infineon | - | Check Price | Get a Quote | S25FL128S, S25FL256S Military 128 Mb (16 MB)/256 Mb (32 MB) FL-S Flash SPI Multi-I/O, 3.0V | ||
| Infineon | - | Check Price | Get a Quote | 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash Memory | ||
| Infineon | - | Check Price | Get a Quote | S25FL116K/S25FL132K/S25FL164K 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash Memory | ||
| Infineon | - | Check Price | Get a Quote | 16-Mbit to 64-Mbit, 3.0 V, SPI Flash Memory family with Multi-I/O support. | ||
| Infineon | - | Check Price | Get a Quote | 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash Memory |
