Memory ICs

2K-bit/4K-bit serial electrically erasable PROM (EEPROM) with Microwire interface.

32Mb Serial RAM with 1.8V/3.0V supply, 104MHz clock, and SPI & QPI protocol support.

The IS66WVE4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.

64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.

64Mbit Pseudo Static Random Access Memory (PSRAM) with self-refresh DRAM array organized as 4M words by 16 bits.

The IS66WVE4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.

The IS66WVE4M16ALL and IS67WVE4M16ALL are 64Mbit Pseudo Static Random Access Memory (PSRAM) devices organized as 4M words by 16 bits, featuring low power modes and dual voltage rails.

64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits, with asynchronous and page mode interface and low power features.

The IS66/67WVE2M16EALL/BLL/CLL and IS66/67WVE2M16TALL/BLL/CLL are integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits.

The IS66WVE2M16DBLL and IS67WVE2M16DBLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits.

32Mbit Pseudo Static Random Access Memory (PSRAM) with 2M x 16 organization, featuring low power modes and dual voltage rails.

The IS66WVE2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits.

32Mbit Pseudo Static Random Access Memory (PSRAM) with self-refresh DRAM array organized as 2M words by 16 bits.

High-speed, 8M bit static RAMs organized as 512K words by 16 bits.

8Mb low voltage, ultra low power pseudo CMOS static RAM.

High-speed, 8M bit static RAMs organized as 512K words by 16 bits with ultra low power operation.

High-speed, 8M bit static RAMs organized as 512K words by 16 bits.

The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.

The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits.

8Mb low voltage, ultra low power pseudo CMOS static RAM organized as 512K words by 16 bits.

8Mb low voltage, ultra low power pseudo CMOS static RAM

The ISSI IS66WV25616ALL/BLL is a high-speed, 4M bit static RAM organized as 256K words by 16 bits.

The ISSI IS62/65WV1288DALL and IS62/65WV1288DBLL are high-speed, 1M bit static RAMs organized as 128K words by 8 bits.

The ISSI IS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits.

The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM. The ISSI IS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits.

1Mx16 high-speed asynchronous CMOS static RAM with ECC.

The IS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits, fabricated using ISSI's high-performance CMOS technology.

The ISSI IS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits.

36 Mb synchronous pipelined static RAM with high-speed, low-power design for burstable memory applications.

The ISSI IS61LF/VF25636A, IS64LF25636A and IS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.

The ISSI IS61LF/VF25636A, IS64LF25636A and IS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.

The ISSI IS61LF/VF25636A, IS64LF25636A and IS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.

The ISSI IS61LF/VF25636A, IS64LF25636A and IS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.

128K x 8 high-speed CMOS static RAM with 12 ns/15 ns access time.

The ISSI IS63LV1024/IS63LV1024L is a very high-speed, 8, 10, 12 ns low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout.

512K bit Serial static RAM organized as 64K bytes by 8 bits with SPI, SDI and SQI interface.

The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits.

The ISSI IS62/65WV5128EALL/BLL/CLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

High-speed 4M bit (512K x 8) ultra low power CMOS static RAM.

The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

512K x 8 low voltage, ultra low power CMOS static RAM with high-speed access times (35, 45, 55 ns).

The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.