KIOXIA

Toshiba, the inventor of Flash Memory, has led the industry in developing Flash Memory products. The company offers a wide range of Flash Memory solutions including SLC NAND, BENAND, Serial Interface NAND, eMMC, and UFS.

Universal Flash Storage (UFS) is a next-generation, higher performance embedded storage solution to e-MMC, bringing high-speed read/write performance and low power consumption for mobile devices and related applications.

KIOXIA’s Universal Flash Storage (UFS) is a next-generation embedded storage solution offering high-speed read/write performance and low power consumption for mobile devices and related applications.

Our UFS (Universal Flash Storage) and e-MMC Managed Flash solutions integrate flash memory and a KIOXIA controller in a single package. An ideal replacement for e-MMC, UFS combines the high performance, power efficiency and enhanced reliability demanded by mobile applications, including smartphones, tablets, AR/VR, automotive and more.

KIOXIA’s broad, high-performance lineup of e-MMC products integrates flash memory and an e-MMC controller in a single BGA package.

KIOXIA e-MMC – Consumer Grade

KIOXIA e-MMC is a consumer-grade embedded MultiMediaCard solution.

Managed Flash Memory Solutions integrating flash memory and a KIOXIA controller in a single package, including UFS and e-MMC.

Our UFS (Universal Flash Storage) and e-MMC Managed Flash solutions integrate flash memory and a KIOXIA controller in a single package.

32GB e-MMC module with 153-ball BGA package, utilizing TOSHIBA NAND flash and controller chip, supporting standard MMC protocol.

16GB e-MMC Module with 153 ball BGA package, utilizing advanced TOSHIBA NAND flash and controller chip, with industry standard MMC protocol.

Toshiba's Flash Memory and other Memory Solutions, leading the industry with innovative technologies since 1984.

Toshiba's Flash Memory products, including SLC NAND, BENAND, Serial Interface NAND, eMMC, and UFS, offer high performance and reliability for various applications.

e•MMCTM is a family of advanced, highly efficient NAND flash memory with an integrated controller and enhanced memory management.

Toshiba's Flash Memory and other Memory Solutions, including SLC NAND, BENAND, Serial Interface NAND, eMMC, and UFS.

Toshiba's Flash Memory products, including SLC NAND, BENAND, Serial Interface NAND, and eMMC, offer high performance and reliability for various applications.

Toshiba Flash Memory products, including SLC NAND, BENAND, Serial Interface NAND, eMMC, and UFS, offering high performance, low power, and various interfaces for diverse applications.

KIOXIA’s broad, high-performance lineup of e-MMC products integrates flash memory and an e-MMC controller in a single BGA package to perform functions such as error correction, wear leveling, logical-to-physical address translation, and bad-block management.

Our UFS (Universal Flash Storage) and e-MMC Managed Flash solutions integrate flash memory and a KIOXIA controller in a single package. An ideal replacement for e-MMC, UFS combines the high performance, power efficiency and enhanced reliability demanded by mobile applications, including smartphones, tablets, AR/VR, automotive and more.

KIOXIA’s broad, high-performance lineup of e-MMC products integrates flash memory and an e-MMC controller in a single BGA package to perform functions such as error correction, wear leveling, logical-to-physical address translation, and bad-block management.

KIOXIA’s e-MMC products integrate flash memory and an e-MMC controller in a single BGA package for managed flash storage.

Consumer UFS Memory IC Consumer UFS Series

UFS (Universal Flash Storage) with integrated controller, compliant with JEDEC Version 2.1, offering high performance mass storage.

Toshiba's Flash Memory, invented in 1984, is the industry standard for storage applications including Memory Cards, SSDs, and industrial equipment.

Toshiba's SLC NAND advanced flash memory products provide cutting-edge endurance and data retention for sensitive or frequently used system data.

Toshiba's SLC NAND advanced flash memory products provide cutting-edge endurance and data retention for sensitive or frequently used system data.

The TH58NVG4S0HTAK0 is a single 3.3V 16Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM).

A single 3.3V 8Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096 blocks.

The TH58NVG3S0HTA00 is a single 3.3V 8Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096 blocks.

Toshiba SLC NAND, BENAND (SLC NAND with built-in ECC), eMMC, and SD memory cards with advanced features like Bad Block Management, Wear Levelling, and ECC.

Toshiba's advanced Flash Memory technology offers SLC NAND providing best in class endurance and data retention for sensitive or frequently used data in a system. For long lasting products or systems working with extremely high data throughput between the host and the memory, Toshiba SLC is the optimal solution.

The TH58BVG2S3HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 64) bytes 64 pages 4096 blocks.

The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM).

The TC58NYG0S3HBAI6 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks.

The TC58NVG2S0HBAI6 is a 4 Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) operating at 3.3V.

The TC58NVG2S0HBAI4 is a 4Gbit (512M x 8) CMOS NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) operating at 3.3V.

A single 3.3V 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 2048 blocks.

The TC58NVG1S3HTA00 is a single 3.3V 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM).

The TC58NVG1S3HBAI4 is a single 3.3V 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM).

Toshiba's SLC NAND and BENAND flash memory products provide high endurance and data retention for sensitive or frequently used system data, suitable for long-lasting products with high data throughput.

A Serial Interface NAND Flash memory for embedded applications supporting the SPI interface.

The TC58BYG1S3HBAI6 is a single 1.8V 2Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048 blocks.

The TC58BYG1S3HBAI4 is a single 1.8V 2Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048 blocks.

The TC58BYG0S3HBAI6 is a single 1.8V 1Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM).

A single 3.3V 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM).

The TC58BVG1S3HTA00 is a single 3.3V 2Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048 blocks.

1 GBIT (128M × 8 BIT) CMOS NAND E2PROM

The XG6 series utilizes KIOXIA's latest 96-layer, 3D TLC (3-bit-per-cell) flash memory. With 4th generation BiCS FLASHTM and SLC cache features, XG6 SSDs reach up to sequential read/write speeds of 3180 MB/s and 2960 MB/s respectively and deliver up to 355,000 random read and 365,000 random write IOPS.

The BG4 series is a line-up of compact single package NVMe™ SSDs with capacities up to 1,024 GB, and leverages a PCIe® Gen3x4 interface and KIOXIA's 96-layer TLC BiCS FLASH™.

e•MMC™ Memory IC e•MMC™ Series