MACOM

The XL1000-BD is a 3-stage 20 - 40 GHz GaAs MMIC low noise amplifier that has a small signal gain of 20 dB with a noise figure of 2 dB across the band.

18.0-50.0 GHz GaAs MMIC distributed amplifier with 17.0 dB small signal gain and 5.0 dB noise figure.

The G40 attenuator is a discrete hybrid design using thin film manufacturing processes for accurate performance and high reliability.

Voltage Controlled Attenuator Module, 5-2000 MHz, with low VSWR and insertion loss.

The A72 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability.

The SM4TH is a termination insensitive mixer, designed for use in military, commercial and test equipment applications.

30mm Illuminated Metal Operators certified for NEMA Type 4X environment.

The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band.

Wideband RF LDMOS integrated power amplifier, 40 W, 28 V, 1800–2100 MHz.

8 W, 700 – 2200 MHz RF LDMOS FET

SX1220 and SX1221 are 28 V, 450 mA, 960 MHz RF power transistors for CDMA2000 applications.

55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band.

The MY84 is a double balanced mixer, designed for use in military, commercial and test equipment applications.

MY51 is a triple balanced mixer, designed for use in military, commercial and test equipment applications.

A broadband, high linearity, medium power series switch element in a 2.0 x 1.3 mm QFN package.

The MSW3100-310 (50 MHz - 1 GHz) and MSW3101-310 (400 MHz - 4 GHz) series of surface mount silicon PIN diode SP3T switches can be used for high power transmit/receive (TR) symmetrical switching or active receiver protection.

The MSW2040-204 (50 MHz - 1 GHz) and MSW2041-204 (400 MHz - 4 GHz) series of surface mount silicon PIN diode SP2T switches can be used for high power transmit/receive (TR) switching or active receiver protection.

High Barrier Silicon Schottky Diodes series fabricated on N-Type epitaxial substrates with high FCOs and optimal mixer performance.

High Barrier Silicon Schottky Diodes series fabricated on N-Type epitaxial substrates with highest FCOs in the industry.

The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Low Barrier Silicon Schottky Diodes MSS30-xxx-x Series

Low Barrier Silicon Schottky Diodes fabricated on N-Type epitaxial substrates with high FCOs for optimum mixer performance.

The MSPD101x-x series are fully-contained sampling phase detectors, each comprising a beam lead silicon step recovery diode, beam lead DC blocking capacitors and a beam lead series-tee pair of low-barrier silicon Schottky diodes mounted on a ceramic substrate.

The sampling phase detector (SPD) module is a hybrid circuit providing a fast step recovery diode, coupling capacitors and a low barrier Schottky pair.

Silicon Step Recovery Diodes (SRDs) with fast transition times for millimeter wave multiplication and picoseconds pulse forming.

Silicon Step Recovery Diodes MMDx & SMMDx Series

Silicon Step Recovery Diodes with fast transition times for millimeter wave multiplication and picoseconds pulse forming.

The MLP71xx Series limiter diodes are specially processed PIN diodes designed for use in passive or active limiters from 100 MHz to beyond 20 GHz.

Termination Insensitive Mixer operating from 1 to 4000 MHz.

The MAVR-0454xx Series is a highly repeatable, UHCVD/ion-implanted, abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for general purpose tuning in the HF to UHF frequency bands.

Low Voltage / Low Rs Silicon Hyperabrupt Varactor Diode

The MAVR-000400 series are ion-implanted, hyperabrupt junction, silicon tuning varactors in the SOT-23 surface mount package.

The MAVR-000400 series are ion-implanted, hyperabrupt junction, silicon tuning varactors in the SOT-23 surface mount package.

A reflective, ultra wideband single pole double throw (SPDT) switch with 1.4 dB insertion loss at 44 GHz.

SURMOUNT X-Band monolithic SPDT switch designed for high power, high performance applications.

M/A-COM’s MASW-008853 is a GaAs PHEMT MMIC single pole double throw (SPDT) high power switch in a low cost SC70 six lead package.

MAPD-008957-CT0012 is a RoHS compliant 2 Way 0° Power Divider in a low cost, surface mount package.

MAMX-011122 is a double balanced mixer MMIC.

10 W 2-Stage Hybrid GaN Module operating from 225 to 2600 MHz.

The MAMF-011070 is a high power broadband PIN diode SPDT switch with a 5 V power management chip designed for 30 MHz to 6 GHz high power applications.

The MAMF-011070 is a high power broadband PIN diode SPDT switch with a 5 V power management chip designed for 30 MHz to 6 GHz high power applications.

A GaN on Si HEMT D-mode amplifier designed for 2 W peak power and optimized for 1 - 5 GHz frequency operation.

GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation.

GaN Amplifier 28 V, 4 W, DC– 6 GHz

GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation with 4 W output power.

Silicon Medium Barrier Schottky Diodes

The MADR-009443 is a four channel driver used to translate TTL control inputs into gate control voltages for GaAs FET microwave switches and attenuators.

High power PIN diode for switch or attenuator applications from 50 MHz to 2 GHz.

An integrated AlGaAs PIN Diode limiter for X-Band (6-12 GHz) applications.

The MADL-011074-DIE is an integrated AlGaAs PIN Diode limiter.