DRAM

MT53D1024M32D4DT-046 AAT:D is a 32Gb LPDDR4 SDRAM device manufactured by Micron Technology. Featuring a 1G × 32 organization, 32-bit data bus width, 2.133GHz maximum clock frequency, LPDDR4-4266 class performance, compact 200-ball VFBGA package, and wide-temperature operation listed at -40°C to +105°C, it is suitable for automotive electronics, infotainment systems, telematics, industrial HMI, embedded computing, networking equipment, edge AI modules, smart displays, and high-performance compact electronic systems. The MT53D1024M32D4DT-046 AAT:D provides high-bandwidth, low-power Micron LPDDR4 memory performance for demanding embedded and automotive-grade system designs.

MT62F2G64D8EK-023 FAIT:C is a 128Gb LPDDR5 SDRAM memory device manufactured by Micron Technology. Featuring a 2G × 64 organization, x64 data bus, 441-ball TFBGA package, and high-speed LPDDR5 mobile DRAM architecture, it is designed for smartphones, tablets, automotive electronics, AI edge devices, embedded computing platforms, smart cameras, and multimedia systems. The MT62F2G64D8EK-023 FAIT:C delivers high memory density, low power consumption, compact integration, and reliable Micron LPDDR5 performance for advanced electronic designs.

MT41K256M16TW-107 IT:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 256M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V low-power operation, compact 96-ball FBGA / TFBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage controllers, consumer electronics, and long-life commercial devices. The MT41K256M16TW-107 IT:P delivers reliable Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT60B4G8AT-64B:B is a Micron 32Gbit DDR5 SDRAM memory IC organized as 4G x 8 and supplied in a 78/117-ball VFBGA package. Designed for DDR5-6400 class high-bandwidth memory systems, it is suitable for servers, data centers, AI computing platforms, networking equipment, telecom infrastructure, industrial computing, storage systems, embedded high-performance boards, and other applications requiring high-density, high-speed external system memory.

MT41K128M16JT-125:K is a 2Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 128M × 16 organization, DDR3L-1600-class speed, 800MHz clock frequency, 1.35V low-power DDR3L operation, and compact 96-ball FBGA 8mm × 14mm package, it is suitable for embedded computing platforms, networking equipment, telecom infrastructure, industrial systems, FPGA development boards, consumer electronics, and long-life commercial devices. The MT41K128M16JT-125:K delivers reliable Micron DDR3L memory performance for compact, power-efficient, and mature electronic designs.

MT41K256M16TW-107:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 256M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V low-power operation, and compact 96-ball FBGA / TFBGA package, it is suitable for embedded computing platforms, networking equipment, telecom infrastructure, industrial systems, storage controllers, consumer electronics, and long-life commercial devices. The MT41K256M16TW-107:P delivers reliable Micron DDR3L memory performance for compact, power-efficient, and mature electronic designs.

MT41K512M16VRN-107 IT:P is an 8Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 16 organization, DDR3L-1866 / 933MHz-class speed, 1.35V-class low-power operation, compact 96-FBGA 8mm × 14mm package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M16VRN-107 IT:P delivers reliable high-density Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT41K512M16VRP-107 IT:P is an 8Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 16 organization, TwinDie™ architecture, DDR3L-1866 / 933MHz-class performance, 1.35V low-power operation, compact 96-ball FBGA package, and -40°C to +95°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M16VRP-107 IT:P delivers reliable high-density Micron DDR3L memory performance for compact, power-efficient, and industrial-grade electronic designs.

MT41K512M8DA-107:P is a 4Gb DDR3L SDRAM memory chip manufactured by Micron Technology. Featuring a 512M × 8 organization, DDR3L-1866-class speed, 933MHz clock frequency, 1.35V low-power operation, and compact 78-ball FBGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, telecom infrastructure, storage devices, consumer electronics, and long-life commercial systems. The MT41K512M8DA-107:P delivers reliable Micron DDR3L memory performance for mature, compact, and power-efficient electronic designs.

MT48H32M16LFB4-6 IT:C is a 512Mb Mobile LPSDR SDRAM memory chip manufactured by Micron Technology. Featuring a 32M × 16 organization, x16 data bus, 166MHz-class clock speed, 5ns access time, compact 54-VFBGA 8mm × 8mm package, and -40°C to +85°C industrial temperature range, it is suitable for embedded computing platforms, industrial control systems, portable devices, networking equipment, medical instruments, and communication modules. The MT48H32M16LFB4-6 IT:C provides reliable low-power Micron mobile SDRAM performance for mature embedded and long-life electronic designs.

MT48LC16M16A2P-6A IT:G is a 256Mb SDR SDRAM memory chip manufactured by Micron Technology. Featuring a 16M × 16 organization, x16 data bus, 166 / 167MHz-class clock speed, 3.3V operation, 54-pin TSOP package, and -40°C to +85°C industrial temperature range, it is suitable for legacy embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The MT48LC16M16A2P-6A IT:G provides reliable Micron SDRAM performance for mature 3.3V memory designs and long-life electronic systems.

MT48LC4M32B2P-6A IT:L is a 128Mb SDR SDRAM memory chip manufactured by Micron Technology. Featuring a 4M × 32 organization, x32 data bus, 166 / 167MHz-class clock speed, 3.3V operation, TSOP-86 package, and -40°C to +85°C industrial temperature range, it is suitable for legacy embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The MT48LC4M32B2P-6A IT:L provides reliable Micron SDRAM performance for mature 3.3V memory designs and long-life electronic systems.

MT53E2G32D4DE-046 AAT:C is a 64Gb LPDDR4X SDRAM memory device manufactured by Micron Technology. Featuring a 2G × 32 organization, 4266MT/s-class data rate, low-power LPDDR4X architecture, and compact 200-ball TFBGA package, it is suitable for automotive electronics, embedded computing platforms, AI edge devices, smart cameras, industrial systems, multimedia equipment, and high-performance mobile products. The MT53E2G32D4DE-046 AAT:C delivers high memory density, low power consumption, compact integration, and reliable Micron mobile DRAM performance for advanced electronic designs.s

DRAM DDR4 16G 1GX16 FBGAIT IC DRAM 16GBIT PARALLEL 96FBGA

441-TFBGA (14x14) SDRAM ROHS

441-TFBGA (14x14) DDR SDRAM ROHS

441-TFBGA (14x14) SDRAM ROHS

Memory IC

Memory IC 14mm mm

Memory IC

556-LFBGA (12.4x12.4) DDR SDRAM ROHS

LPDDR4 DRAM, 1536MX32, CMOS, PBGA200, VFBGA-200

Description: LPDDR4 DRAM, 512MX32, CMOS, PBGA200, FBGA-200

Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP-32

EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50

EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50

Description: Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

Memory IC 18.5mm mm

DDR DRAM, 8MX36, CMOS, PBGA144, UBGA-144

DDR DRAM, 16MX18, 0.25ns, CMOS, PBGA144, MICRO, BGA-144

Description: DDR DRAM, 16MX18, 0.3ns, CMOS, PBGA144, LEAD FREE, UBGA-144

Synchronous DRAM, 8MX32, 6ns, CMOS, PDSO86, 0.400 INCH, TSOP-86

Description: Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86

Description: Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86

Description: Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, PLASTIC, VFBGA-90

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

Description: Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54

Synchronous DRAM,

Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54

Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86

Description: Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86

Synchronous DRAM, 16MX32, CMOS, PBGA90

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54