Semiconductor Opto Division

High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology. As part of the SurfLightTM portfolio, the VSMY99445DS is an infrared, 940 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens.

The VSMY98545DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens.

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

VSMS3700 is an infrared, 950 nm emitting diode in GaAs technology, molded in a PLCC-2 package for surface mounting (SMD).

VSMS3700 is an infrared, 950 nm emitting diode in GaAs technology, molded in a PLCC-2 package for surface mounting (SMD).

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

High speed infrared emitting diodes, 850 nm, GaAlAs DH technology.

High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH

VSMG2720 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).

VSMG2700 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).

High speed infrared emitting diodes, 850 nm, GaAlAs, DH technology.

High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH

VSMG10850 is an infrared, 850 nm side looking emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in clear, untinted plastic package for surface mounting (SMD).

VSMF4720 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).

Infrared emitting diode, 870 nm, GaAlAs double hetero technology, high radiant power and high speed, PLCC-2 package.

VSMF3710 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

High speed infrared emitting diode, 890 nm, GaAlAs DH technology, side looking, molded in clear untinted plastic package with lens for surface mounting.

High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH

High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH

High speed infrared emitting diodes, 890 nm, GaAlAs DH technology.

High speed infrared emitting diodes, 890 nm, GaAlAs (DH) technology, in surface-mount packages.

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW

VSMB11940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD).

VSMB10940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD).

Vishay Intertechnology Releases High-Power, High-Speed 940 nm Infrared Emitting Diode for Gesture Remote Control Applications

Optocoupler, Phototriac Output, Non-Zero Crossing, High dV/dt, Low Input Current, DIP-4 Package

Optocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package. The VOS628A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package.

The VOR1142 is an SPST normally open switch (1 form A) that can replace electromechanical relays in many applications. It is constructed using a GaAlAs IRED actuation control and MOSFETs for the switch output.

The VOM160 series phototriac consist a AlGaAs infrared emitting diode (IRED) optically coupled to a photosensitive non-zero crossing TRIAC packaged in a SOP-4 package. It has a IRED trigger current of 5 mA, 7 mA, and 10 mA.

VOM160 series phototriac with AlGaAs IRED and non-zero crossing TRIAC in SOP-4 package, trigger currents 5 mA, 7 mA, 10 mA.

Optocoupler, Phototransistor Output, AC Input, Low Input Current, 4 Pin LSOP, Long Creepage Mini-Flat Package

The VOL618A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin LSOP wide body package.

The VOL3120 consists of an infrared light emitting diode optically coupled to an integrated circuit with a power output stage.

2.5 A Output Current IGBT and MOSFET Driver with AlGaAs LED optically coupled to an integrated circuit with a power output stage.

2.5 A Output Current IGBT and MOSFET Driver. The VOD3120A consists of a AlGaAs LED optically coupled to an integrated circuit with a power output stage.

The VO615A is a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package.

The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.

Optocoupler, Phototransistor Output, High Temperature. The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.

The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.

The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.

The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.

Optocoupler, Phototriac Output, High dV/dt, Low Input Current. The VO4257 and VO4258 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package.

Optocoupler, Phototriac Output, High dV/dt, Low Input Current. The VO4257 and VO4258 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package.

The VO4257 and VO4258 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package.

Optocoupler, Phototriac Output, High dV/dt, Low Input Current. The VO4257 and VO4258 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package.

Optocoupler, Phototriac Output, High dV/dt, Low Input Current. The VO4257 and VO4258 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package.

Optocoupler, Phototriac Output, High dV/dt, Low Input Current. The VO4257 and VO4258 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package.

The VO4257 and VO4258 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package.

Optocoupler, Phototriac Output, High dV/dt, Low Input Current. The VO4257 and VO4258 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package.