DRAM

SK hynix H5AN8G8NDJR-XNC 8Gb DDR4 SDRAM x8 3200Mbps FBGA-78 Memory IC SK hynix H5AN8G8NDJR-XNC is an 8Gb DDR4 SDRAM memory component featuring x8 organization, DDR4-3200 data rate, 1.2V low-power operation, and a compact FBGA-78 package. Designed for industrial computing, networking equipment, embedded systems, and AI edge applications, this DDR4 memory provides high-speed data access, reliable operation, and efficient power performance for modern electronic platforms.

The H5TQ4G63CFR-RDC is a SK hynix 4Gb DDR3 SDRAM memory IC designed for embedded systems, industrial controllers, networking equipment, multimedia devices, and processor-based applications. Featuring a 256M × 16-bit organization, 512MB memory capacity, 800MHz clock frequency, 1600Mb/s data rate, FBGA-96 package, 1.5V DDR3 operation, and advanced DDR3 functions including dynamic ODT, ZQ calibration, write leveling, auto precharge, and self-refresh, the SK hynix H5TQ4G63CFR-RDC provides reliable high-density memory performance for ARM processors, FPGA systems, embedded Linux platforms, communication equipment, and industrial computing applications.

H5CG46MEBDX015N is a 16Gb DDR5 SDRAM memory chip manufactured by SK hynix. Featuring a 1G × 16 organization, 4800 MT/s data rate, and 1.1V low-power operation, it delivers high bandwidth and energy-efficient performance for servers, cloud computing infrastructure, AI systems, networking equipment, and high-performance embedded applications. Designed for next-generation computing platforms, the H5CG46MEBDX015N provides the speed, density, and reliability required by modern memory-intensive workloads.

The SK Hynix DDR5 16Gb x 8 memory module is designed to deliver exceptional performance and efficiency for modern computing applications. With a high density of 16GB and a frequency of 4800MHz, this synchronous SDRAM module is perfect for high-speed data processing and multitasking. Its compact FCBGA package ensures easy integration into various devices while maintaining optimal thermal performance across a wide operating temperature range from 0°C to 85°C.

DDR DRAM,

Memory IC 13 mm mm

Description: DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, LEAD FREE, FBGA-84

DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66

DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66

DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144

DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 PITCH, ROHS COMPLIANT, TSOP2-66

Description: Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

Description: Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

DDR DRAM Module, 512MX72, CMOS, UDIMM-240

DDR DRAM Module, 1GX64, CMOS, UDIMM-240

DDR DRAM Module,

DDR DRAM Module,

DDR DRAM Module, 2GX72, CMOS, ROHS COMPLIANT, RDIMM-288

DRAM,

DDR DRAM Module, 2GX72, CMOS, DIMM-288

DRAM,