TOSHIBA

Silicon N-channel MOSFET (U-MOS-H) with low on-resistance and AEC-Q101 qualification for automotive applications.

1 N-Channel TSON-8(3.1x3.1) MOSFETs ROHS

XPH4R714MC Silicon P-Channel MOSFET (U-MOS)

MOSFETs Silicon P-Channel MOS (U-MOS)

Silicon N-channel MOSFET (U-MOS-H)

TOSHIBA bi-directional triode thyristor silicon planar type for AC power control applications.

TOSHIBA Thyristor Silicon Planar Type for medium-power control applications

ULN280*A Receivers 8/0 Drivers/Receivers

Toshiba Schottky Barrier Rectifier for switching mode power supply and converter & chopper applications.

TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type for switching mode power supply, converter and chopper applications.

TOSHIBA Schottky Barrier Rectifier, 30A, 40V

TOSHIBA high efficiency diode stack (HED) silicon epitaxial type

TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type

High efficiency diode stack for switching mode power supply applications

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE for switching mode power supply, converter and chopper applications.

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE, U1JU44

Super fast recovery rectifier for switching mode power supply applications.

Silicon diffused junction rectifier for hybrid use.

TOSHIBA SCHOTTKY BARRIER RECTIFIER for high speed rectifier applications

Schottky barrier rectifier for switching mode power supply, converter & chopper applications.

Super fast recovery rectifier silicon diffused type

TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE

Silicon diffused junction rectifier for hybrid applications

TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE for hybrid use, with average forward current 1.0 A and repetitive peak reverse voltage 100 V to 600 V.

Silicon diffused junction rectifier for hybrid use with average forward current of 1.0 A and repetitive peak reverse voltage up to 600 V.

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

Silicon diffused type rectifier for high-speed rectifier applications with fast recovery.

TOSHIBA silicon diffused type high-speed rectifier for fast recovery applications.

TOSHIBA silicon diffused rectifier for high-speed applications with fast recovery.

Toshiba silicon diffused type fast recovery rectifier for high speed applications.

Silicon diffused type rectifier for high-speed rectifier applications with fast recovery.

TW107N65C is a Silicon Carbide N-Channel MOSFET with built-in SiC Schottky barrier diode.

TW027N65C is a Silicon Carbide N-Channel MOSFET.

Silicon Carbide N-Channel MOSFET with built-in SiC Schottky barrier diode.

TOSHIBA Fast Recovery Diode Silicon Diffused Type for TV applications (fast recovery).

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV for ECM applications.

TTC5200 is a silicon NPN triple diffused transistor designed for power amplifier applications.

NPN bipolar transistors for AC adaptors and DC-DC converters.

NPN epitaxial silicon transistor for power amplifier and power switching applications.

TTC009 is an NPN epitaxial transistor designed for power amplifier and power switching applications, featuring low collector-emitter saturation voltage (0.5V max at 1A) and high-speed switching (0.4μs typ.).

NPN bipolar transistors for AC adaptors and DC-DC converters with higher current rating and high-speed switching capabilities.

PNP epitaxial transistor for power amplifier applications

Bipolar Transistors Silicon PNP Epitaxial Type

SiC Schottky Barrier Diode

SiC Schottky Barrier Diode

SiC Schottky Barrier Diode with high surge current capability and isolation package.