Winbond

The WMS7170/7171 is a single channel 100-tap non-volatile linear digital potentiometer available in 10KΩ, 50KΩ and 100KΩ resistance.

Non-volatile digital potentiometers with up/down (3-wire) interface, 10kΩ, 50kΩ, 100kΩ resistance, 100 taps, without/with output buffer.

The WMS7170/7171 is a single channel 100-tap non-volatile linear digital potentiometer available in 10KΩ, 50KΩ and 100KΩ resistance.

Single channel 100-tap non-volatile linear digital potentiometer with 10KΩ, 50KΩ, and 100KΩ resistance options.

The WMS7130/7131 is a single channel 32-tap non-volatile linear digital potentiometer available in 10KΩ, 50KΩ and 100KΩ resistance.

Non-volatile digital potentiometers with 3-wire up/down interface, 32 taps, available in 10KΩ, 50KΩ, and 100KΩ resistance, without (WMS7130) or with (WMS7131) output buffer.

W949D6DB / W949D2DB is a high-speed Low Power double data rate synchronous dynamic random access memory (LPDDR SDRAM).

W949D6DB / W949D2DB is a high-speed Low Power double data rate synchronous dynamic random access memory (LPDDR SDRAM)

W949D6DB / W949D2DB is a high-speed Low Power double data rate synchronous dynamic random access memory (LPDDR SDRAM). An access to the LPDDR SDRAM is burst oriented.

W949D6DB / W949D2DB is a high-speed Low Power double data rate synchronous dynamic random access memory (LPDDR SDRAM)

The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology.

The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology.

The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology.

The Winbond 256Mb Low Power SDRAM is a low power synchronous memory designed for battery-powered applications.

256Mb Low Power SDRAM with low power features essential for battery-powered applications.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential for applications which use batteries.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential for applications which use batteries.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential for applications which use batteries.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential for applications which use batteries.

The Winbond 128Mb Low Power SDRAM is a low power synchronous memory designed for low power consumption applications.

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. W9864G6KH delivers a data bandwidth of up to 200M words per second.

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits.

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits.

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. W9864G6KH delivers a data bandwidth of up to 200M words per second.

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits.

W9864G6JT is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. W9864G6JT delivers a data bandwidth of up to 166M words per second.

W9864G6JH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. W9864G6JH delivers a data bandwidth of up to 200M words per second.

W9864G6JH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. W9864G6JH delivers a data bandwidth of up to 200M words per second.

W9864G6JB is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits.

W9864G6JB is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. W9864G6JB delivers a data bandwidth of up to 166M words per second.

W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits.

W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second.

W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. It delivers a data bandwidth of up to 200M words per second.

W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second.

W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits.

W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second.

W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits, delivering a data bandwidth of up to 200M words per second.

W9825G6JH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits.

W9825G6JH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. It delivers a data bandwidth of up to 200M words per second (-5).

W9825G6JH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. W9825G6JH delivers a data bandwidth of up to 200M words per second (-5).

W9825G6JB automotive grade is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits.

W9825G2JB is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2,097,152 words × 4 banks × 32 bits.

W9825G6JB automotive grade is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits.