2DD2656-7 [DIODES]

2DD2656-7 Overview

In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 350mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 25mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 270MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2DD2656-7 Features

the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 270MHz

2DD2656-7 Applications

There are a lot of Diodes Incorporated
2DD2656-7 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting