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TMS320F28334ZJZS
Texas Instruments
RFQ List
Yes. 2N7002K-7 by DIODES is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.
Pricing for 2N7002K-7 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.
2N7002K-7 is a DIODES Transistors with Vgs th - Gate-Source Threshold Voltage:: 1 V and Vds - Drain-Source Breakdown Voltage:: 60 V. Review the product details or submit an RFQ if you need confirmation before purchase.
Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.
If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.
Yes. If 2N7002K-7 is unavailable, obsolete, or does not meet your required lead time, we can help check similar DIODES Transistors parts or compatible alternatives.
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IMPORTANT NOTICE
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
The 2N7002K-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed for low-power switching applications requiring compact size, fast switching performance, low input capacitance, and reliable voltage control.
The device is based on MOSFET technology and features a 60V drain-source voltage rating, 380mA continuous drain current capability, and integrated gate ESD protection up to 2kV. It is supplied in a compact SOT23 surface-mount package, making it suitable for high-density PCB designs. Diodes Incorporated
The 2N7002K-7 is widely used in motor control circuits, power-management functions, LED backlighting, load switching, level shifting, relay drivers, and general-purpose low-current switching applications.
| Segment | Meaning |
|---|---|
| 2N | JEDEC transistor designation |
| 7002 | Standard N-channel MOSFET family identifier |
| K | Diodes Incorporated enhanced version with ESD protection |
| -7 | SOT23 package, tape-and-reel packaging |
✔ Compact N-channel enhancement MOSFET
✔ 60V drain-source voltage rating
✔ 380mA continuous drain current
✔ Low-power switching capability
✔ Integrated 2kV gate ESD protection
✔ Fast switching performance
✔ Low input capacitance
✔ Compact SOT23 package
✔ RoHS compliant and environmentally friendly
✔ Suitable for:
The 2N7002K-7 provides a 60V drain-source voltage rating, making it suitable for low-voltage and medium-voltage switching applications.
Benefits:
Typical applications:
The device is optimized for low-current switching applications with:
Benefits:
The MOSFET provides:
Benefits:
The 2N7002K integrates ESD protection up to 2kV.
Benefits:
The device uses a standard SOT23 surface-mount package.
Benefits:
The 2N7002K features low gate charge and low input capacitance characteristics.
Benefits:
With operation at VGS = 4.5V, the device can be driven by many standard logic circuits.
Benefits:
The device is:
Benefits:
The 2N7002K is suitable for low-power motor-control switching. Diodes Incorporated
Applications:
Suitable for:
Benefits:
The device is used in LED control applications. Diodes Incorporated
Applications:
Applications:
The MOSFET can be used as a low-side switching element for:
Common uses include:
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
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