APT13005TF-G1 [DIODES]

APT13005TF-G1 Overview

DC current gain in this device equals 8 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 900mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 900mV @ 1A, 4A.An emitter's base voltage can be kept at 9V to gain high efficiency.Product comes in TO-220-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 4A volts.

APT13005TF-G1 Features

the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
the supplier device package of TO-220-3

APT13005TF-G1 Applications

There are a lot of Diodes Incorporated
APT13005TF-G1 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting