BC847BFZ-7B Overview

DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC847BFZ-7B Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 180MHz

BC847BFZ-7B Applications

There are a lot of Diodes Incorporated
BC847BFZ-7B applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting