Part No:
BCW66HTC
Category:
Transistors
Description:
NPN -55°C~150°C TJ 20nA 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Package:
-
Datasheet:
-
Production Status:
In Stock Status:
Specification
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
Collector-Emitter Breakdown Voltage
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Continuous Collector Current
Products Detail
BCW66HTC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 800mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 800mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 800mA volts at its maximum.
BCW66HTC Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66HTC Applications
There are a lot of Diodes Incorporated
BCW66HTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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