Part No:
BST52TA
Category:
Transistors
Description:
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
Package:
-
Production Status:
In Stock Status:
Specification
Collector Current-Max (IC)
Collector-Emitter Voltage-Max
DC Current Gain-Min (hFE)
Moisture Sensitivity Level
Operating Temperature-Max
Peak Reflow Temperature (Cel)
Power Dissipation-Max (Abs)
Time@Peak Reflow Temperature-Max (s)
Transistor Element Material
Transition Frequency-Nom (fT)
Products Detail
BST52TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
BST52TA Features
the DC current gain for this device is 1000 @ 150mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 150MHz
BST52TA Applications
There are a lot of Diodes Incorporated
BST52TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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