EL4502-V [EVERLIGHT]

The 6N135, 6N136, and EL4502 devices consist of an infrared emitting diode coupled to a high-speed photo detector transistor. A separate connection for photodiode bias and output-transistor collector significantly increases speed over conventional phototransistor couplers by reducing base-collector capacitance. These devices feature high isolation voltage (5000 Vrms), wide operating temperature range (-55°C to 100°C), guaranteed performance from 0°C to 70°C, and are Pb-free and RoHS compliant. They are available in standard DIP-8, wide-lead spacing, and SMD options.