Product Description:

The FMH28N50E is a high-power, low-noise N-channel enhancement mode metal-oxide semiconductor field-effect transistor (MOSFET) from Fuji Electric. This device is designed for switching applications, offering excellent performance and reliability. With a maximum drain-source on resistance of 0.19 ohms and a maximum power dissipation of 400 watts, the FMH28N50E is suitable for a wide range of applications, including power supplies, motor control, and switching power converters.

Features:

• Low noise operation for improved signal integrity
• High power dissipation of 400 watts
• Low on-resistance of 0.19 ohms for efficient switching
• N-channel enhancement mode for improved performance
• Built-in diode for improved reliability
• High pulse drain current of 112 amps for high-frequency applications
• Operating temperature range of -40°C to 150°C

Applications:

• Power supplies
• Motor control
• Switching power converters
• High-frequency switching applications
• Automotive electronics

Alternative Parts:

• Other N-channel MOSFETs from Fuji Electric, such as the FMH28N50E
• Other low-noise MOSFETs from other manufacturers, such as the IRF540 from International Rectifier

Embedded Modules:

• None

FAQs:

Q: What is the maximum power dissipation of the FMH28N50E? A: The maximum power dissipation of the FMH28N50E is 400 watts.

Q: What is the maximum drain current of the FMH28N50E? A: The maximum drain current of the FMH28N50E is 28 amps.

Q: Is the FMH28N50E suitable for high-frequency applications? A: Yes, the FMH28N50E is suitable for high-frequency applications, with a maximum pulse drain current of 112 amps.

Q: What is the operating temperature range of the FMH28N50E? A: The operating temperature range of the FMH28N50E is -40°C to 150°C.

Q: Is the FMH28N50E RoHS compliant? A: The Reach Compliance Code is unknown, so it is not possible to determine if the FMH28N50E is RoHS compliant.