2N2018 [General Semiconductor]

2N2018 Overview

In this device, the DC current gain is 20 @ 500mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 6V @ 100mA, 1A.Product comes in the supplier's device package TO-111.There is a 125 V maximal voltage in the device due to collector-emitter breakdown.

2N2018 Features

the DC current gain for this device is 20 @ 500mA, 10V
the vce saturation(Max) is 6V @ 100mA, 1A
the supplier device package of TO-111

2N2018 Applications

There are a lot of General Semiconductor
2N2018 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting