BYG10D-E3/TR3 [General Semiconductor]

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Features include dynamic dV/dt rating, repetitive avalanche rated, logic-level gate drive, RDS(on) specified at VGS=4V and 5V, fast switching, ease of paralleling, and simple drive requirements.