VBT4045C-E3/8W [General Semiconductor]

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier using Trench MOS Schottky technology, featuring low forward voltage drop, low power losses, and high efficiency operation. Suitable for high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. Primary characteristics include 2 x 20 A average forward current per device, 45 V repetitive peak reverse voltage, 240 A peak forward surge current, 0.41 V forward voltage at 20 A, and 150 °C maximum junction temperature. Package is D2PAK (TO-263AB) with common cathode configuration.