Name: IRF9531
Brand: HARRIS
SKU: IRF9531

Part No:

IRF9531

Transistors

Manufacturer:

HARRIS

Description:

Description: Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Package:

-

RoHS Status:

-

Datasheet:

-

Production Status:

In Stock Status:

Specification

Type

Parameter

RoHS Status

Non-RoHS Compliant

Part Life Cycle Code

Obsolete

Package Description

FLANGE MOUNT, R-PSFM-T3

Reach Compliance Code

unknown

ECCN Code

EAR99

HTS Code

8541.29.00.95

Avalanche Energy Rating (Eas)

500 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

80 V

Drain Current-Max (ID)

12 A

Drain-source On Resistance-Max

0.3 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-220AB

JESD-30 Code

R-PSFM-T3

JESD-609 Code

Number of Elements

Number of Terminals

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Polarity/Channel Type

P-CHANNEL

Power Dissipation Ambient-Max

75 W

Power Dissipation-Max (Abs)

75 W

Pulsed Drain Current-Max (IDM)

48 A

Qualification Status

Not Qualified

Surface Mount

Terminal Finish

TIN LEAD

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Turn-off Time-Max (toff)

280 ns

Turn-on Time-Max (ton)

200 ns

Products Detail

No product details available

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

No documents available

IRF9531 [HARRIS]