Part No:
IXFB210N30P3
Category:
Transistors
Description:
MOSFET (Metal Oxide) N-Channel Tube 14.5m ? @ 105A, 10V ±20V 16200pF @ 25V 268nC @ 10V 300V TO-264-3, TO-264AA
Package:
-
Production Status:
In Stock Status:
Specification
Mount
Surface Mount, Through Hole
Transistor Element Material
Moisture Sensitivity Level (MSL)
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain-source On Resistance-Max
Pulsed Drain Current-Max (IDM)
Avalanche Energy Rating (Eas)
Products Detail
IXFB210N30P3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 16200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 210A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 94 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 550A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 46 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFB210N30P3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 210A
the turn-off delay time is 94 ns
based on its rated peak drain current 550A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFB210N30P3 Applications
There are a lot of IXYS
IXFB210N30P3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Key Features
No key features available
Application scenarios
No application scenarios available
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