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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. 2N6766 Microchip

    2N6766 [Microchip]

    2N6766
    2N6766

    Part No:

    2N6766

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    MOSFET (Metal Oxide) N-Channel Bulk 90m ? @ 30A, 10V ±20V 115nC @ 10V 200V TO-204AE

    RoHS Status:

    Product FAQ

    1. Is 2N6766 available for RFQ?

    Yes. 2N6766 by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for 2N6766?

    Pricing for 2N6766 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of 2N6766?

    2N6766 is a Microchip Transistors with Packaging: Bulk and Current - Continuous Drain (Id) @ 25°C: 30A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for 2N6766?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can 2N6766 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to 2N6766?

    Yes. If 2N6766 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    2N6766

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-204AE
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Bulk
    Published
    1997
    JESD-609 Code
    e0
    Pbfree Code
    no
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    ECCN Code
    EAR99
    Terminal Finish
    TIN LEAD OVER NICKEL
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    BOTTOM
    Terminal Form
    PIN/PEG
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Reach Compliance Code
    unknown
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Pin Count
    2
    JESD-30 Code
    O-MBFM-P2
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    4W Ta 150W Tc
    Operating Mode
    ENHANCEMENT MODE
    Case Connection
    DRAIN
    FET Type
    N-Channel
    Current - Continuous Drain (Id) @ 25°C
    30A Tc
    Gate Charge (Qg) (Max) @ Vgs
    115nC @ 10V
    Rise Time
    190ns
    Drain to Source Voltage (Vdss)
    200V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±20V
    Continuous Drain Current (ID)
    30A
    Gate to Source Voltage (Vgs)
    20V
    Drain-source On Resistance-Max
    0.065Ohm
    DS Breakdown Voltage-Min
    200V
    RoHS Status
    RoHS Compliant

    Products Detail

    2N6766 Overview


    The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

    2N6766 Features


    a continuous drain current (ID) of 30A
    a 200V drain to source voltage (Vdss)


    2N6766 Applications


    There are a lot of Microsemi Corporation
    2N6766 applications of single MOSFETs transistors.


    • LCD/LED TV
    • Consumer Appliances
    • Lighting
    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools

    Documents

    Datasheets:

    2N6764,66,68,70
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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