2N6788U [Microchip]

2N6788U Overview

In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 18A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

2N6788U Features

a continuous drain current (ID) of 4.5A
based on its rated peak drain current 18A.
a 100V drain to source voltage (Vdss)

2N6788U Applications

There are a lot of Microsemi Corporation
2N6788U applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.