APT10M11B2VFRG [Microchip]

APT10M11B2VFRG Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 10300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.By using drive voltage (10V), this device helps reduce its overall power consumption.

APT10M11B2VFRG Features

the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.

APT10M11B2VFRG Applications

There are a lot of Microsemi Corporation
APT10M11B2VFRG applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools