APT10M11JVRU2 [Microchip]

APT10M11JVRU2 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [142A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 51 ns.A maximum pulsed drain current of 576A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

APT10M11JVRU2 Features

the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 142A
the turn-off delay time is 51 ns
based on its rated peak drain current 576A.
a 100V drain to source voltage (Vdss)

APT10M11JVRU2 Applications

There are a lot of Microsemi Corporation
APT10M11JVRU2 applications of single MOSFETs transistors.

• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit