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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. APT18M80S Microchip

    APT18M80S [Microchip]

    APT18M80S
    APT18M80S

    Part No:

    APT18M80S

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    MOSFET (Metal Oxide) N-Channel Bulk 530m ? @ 9A, 10V ±30V 3760pF @ 25V 120nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    RoHS Status:

    Product FAQ

    1. Is APT18M80S available for RFQ?

    Yes. APT18M80S by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APT18M80S?

    Pricing for APT18M80S can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APT18M80S?

    APT18M80S is a Microchip Transistors with Packaging: Bulk and Current - Continuous Drain (Id) @ 25°C: 19A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APT18M80S?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APT18M80S be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APT18M80S?

    Yes. If APT18M80S is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APT18M80S

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Surface Mount
    Mounting Type
    Surface Mount
    Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Bulk
    JESD-609 Code
    e3
    Pbfree Code
    yes
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    Terminal Finish
    PURE MATTE TIN
    Additional Feature
    AVALANCHE RATED
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    SINGLE
    Terminal Form
    GULL WING
    Peak Reflow Temperature (Cel)
    245
    Time@Peak Reflow Temperature-Max (s)
    30
    Pin Count
    3
    JESD-30 Code
    R-PSSO-G2
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    500W Tc
    Operating Mode
    ENHANCEMENT MODE
    Case Connection
    DRAIN
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Vgs(th) (Max) @ Id
    5V @ 1mA
    Input Capacitance (Ciss) (Max) @ Vds
    3760pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    19A Tc
    Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
    Drain to Source Voltage (Vdss)
    800V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±30V
    Continuous Drain Current (ID)
    19A
    Drain-source On Resistance-Max
    0.53Ohm
    Pulsed Drain Current-Max (IDM)
    70A
    DS Breakdown Voltage-Min
    800V
    Avalanche Energy Rating (Eas)
    795 mJ
    RoHS Status
    RoHS Compliant

    Products Detail

    APT18M80S Overview


    The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 795 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3760pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 19A continuous drain current (ID).Peak drain current is 70A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

    APT18M80S Features


    the avalanche energy rating (Eas) is 795 mJ
    a continuous drain current (ID) of 19A
    based on its rated peak drain current 70A.
    a 800V drain to source voltage (Vdss)


    APT18M80S Applications


    There are a lot of Microsemi Corporation
    APT18M80S applications of single MOSFETs transistors.


    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies

    Documents

    Datasheets:

    APT18M80B/S
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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