Part No:
APT20M22JVRU3
Category:
Power Supplies
Description:
MOSFET (Metal Oxide) N-Channel Bulk 22m ? @ 48.5A, 10V ±30V 8500pF @ 25V 290nC @ 10V 200V SOT-227-4, miniBLOC
Package:
-
Production Status:
In Stock Status:
Specification
Transistor Element Material
Moisture Sensitivity Level (MSL)
Configuration
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain-source On Resistance-Max
Pulsed Drain Current-Max (IDM)
Avalanche Energy Rating (Eas)
Products Detail
APT20M22JVRU3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 97A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 48 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 388A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 16 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
APT20M22JVRU3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 97A
the turn-off delay time is 48 ns
based on its rated peak drain current 388A.
a 200V drain to source voltage (Vdss)
APT20M22JVRU3 Applications
There are a lot of Microsemi Corporation
APT20M22JVRU3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
Key Features
No key features available
Application scenarios
No application scenarios available
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