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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APT31N60BCSG Microchip

    APT31N60BCSG [Microchip]

    APT31N60BCSG
    APT31N60BCSG

    Part No:

    APT31N60BCSG

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 100m ? @ 18A, 10V ±30V 3055pF @ 25V 85nC @ 10V TO-247-3

    RoHS Status:

    Product FAQ

    1. Is APT31N60BCSG available for RFQ?

    Yes. APT31N60BCSG by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APT31N60BCSG?

    Pricing for APT31N60BCSG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APT31N60BCSG?

    APT31N60BCSG is a Microchip Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 31A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APT31N60BCSG?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APT31N60BCSG be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APT31N60BCSG?

    Yes. If APT31N60BCSG is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APT31N60BCSG

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-247-3
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Tube
    Published
    2005
    JESD-609 Code
    e1
    Pbfree Code
    yes
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    Terminal Finish
    TIN SILVER COPPER
    Additional Feature
    AVALANCHE ENERGY RATED
    Voltage - Rated DC
    600V
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    SINGLE
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Current Rating
    31A
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Pin Count
    3
    JESD-30 Code
    R-PSFM-T3
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    255W Tc
    Operating Mode
    ENHANCEMENT MODE
    Case Connection
    DRAIN
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Vgs(th) (Max) @ Id
    3.9V @ 1.2mA
    Input Capacitance (Ciss) (Max) @ Vds
    3055pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    31A Tc
    Gate Charge (Qg) (Max) @ Vgs
    85nC @ 10V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±30V
    Continuous Drain Current (ID)
    31A
    JEDEC-95 Code
    TO-247AD
    Drain-source On Resistance-Max
    0.1Ohm
    Pulsed Drain Current-Max (IDM)
    93A
    Avalanche Energy Rating (Eas)
    800 mJ
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    APT31N60BCSG Overview


    As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3055pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 93A, its maximum pulsed drain current.In addition to reducing power consumption, this device uses drive voltage (10V).

    APT31N60BCSG Features


    the avalanche energy rating (Eas) is 800 mJ
    a continuous drain current (ID) of 31A
    based on its rated peak drain current 93A.


    APT31N60BCSG Applications


    There are a lot of Microsemi Corporation
    APT31N60BCSG applications of single MOSFETs transistors.


    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies
    • Industrial Power Supplies
    • PFC stages, hard switching PWM stages and resonant switching
    • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
    • Lighting, Server, Telecom and UPS.

    Documents

    Datasheets:

    APT31N60BCS(G)
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
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