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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APT38N60BC6 Microchip

    APT38N60BC6 [Microchip]

    APT38N60BC6
    APT38N60BC6

    Part No:

    APT38N60BC6

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    600V 106A Super Junction MOSFET with ultra-low RDS(ON) and optimized switching performance.

    RoHS Status:

    Product FAQ

    1. Is APT38N60BC6 available for RFQ?

    Yes. APT38N60BC6 by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APT38N60BC6?

    Pricing for APT38N60BC6 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APT38N60BC6?

    APT38N60BC6 is a Microchip Transistors with Thermal Resistance Junction To Ambient: 40°C/W and Drain Source Leakage Current 150C Max: 500µA. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APT38N60BC6?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APT38N60BC6 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APT38N60BC6?

    Yes. If APT38N60BC6 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APT38N60BC6

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Thermal Resistance Junction To Ambient
    40°C/W
    Power Dissipation
    833W
    Gate Source Voltage
    ±20V
    Continuous Drain Current (100C)
    68A
    Continuous Drain Current (25C)
    106A
    Pulsed Drain Current
    318A
    Thermal Resistance Junction To Case
    0.15°C/W
    Input Capacitance
    8390pF
    Output Capacitance
    7115pF
    Total Gate Charge
    308 nC
    Reverse Transfer Capacitance
    229pF
    Operating Temperature
    -55°C ~ 150°C
    Supply Voltage
    600V
    Package
    T-Max® (B2), TO-264 (L)
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Avalanche Current
    18.6A
    Breakdown Voltage
    650V
    Continuous Source Current
    92A
    Diode Forward Voltage
    1.2V
    Drain Source Leakage Current 150C Max
    500µA
    Drain Source Leakage Current 25C Max
    50µA
    Fall Time
    164 ns
    Gate Drain Charge
    160 nC
    Gate Source Charge
    50 nC
    Gate Source Leakage Current Max
    200 nA
    Lead Temperature
    260°C
    Mounting Torque Inch Pound
    10 in·lbf
    Mounting Torque Newton Meter
    1.1 N·m
    On Resistance
    0.035Ω
    Package Weight G
    6.2 g
    Package Weight Oz
    0.22 oz
    Peak Diode Recovery Dv Dt Max
    15V/ns
    Peak Recovery Current
    47A
    Pulsed Source Current
    318A
    Repetitive Avalanche Energy
    3.4 mJ
    Reverse Recovery Charge
    45 µC
    Reverse Recovery Time
    1400 ns
    Rise Time
    79 ns
    Single Pulse Avalanche Energy
    2200 mJ
    Threshold Voltage Max
    3.5V
    Threshold Voltage Min
    2.5V
    Turn Off Delay Time
    277 ns
    Turn Off Switching Energy 125C
    4200 µJ
    Turn Off Switching Energy 25C
    3775 µJ
    Turn On Delay Time
    25 ns
    Turn On Switching Energy 125C
    4055 µJ
    Turn On Switching Energy 25C
    2995 µJ

    Products Detail

    Super Junction MOSFET featuring ultra-low RDS(ON) of 0.035Ω, low Miller capacitance, and ultra-low gate charge. Includes avalanche energy rating, extreme dv/dt rating, and dual die (parallel) construction. Available in T-Max® and TO-264 packages, designed for switch-mode operation.

    Key Features

    • Ultra Low RDS(ON), Low Miller Capacitance, Ultra Low Gate Charge, Avalanche Energy Rated, Extreme dv/dt Rated, Dual die (parallel), T-MAX and TO-264 Packages
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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