APT40GP60JDQ2 [Microchip]

POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low E_off is achieved through leading technology silicon design and lifetime control processes. A reduced V_CE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of C_ies/C_res provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Features include fast switching, low conduction loss, and RoHS compliance.