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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APT45M100J Microchip

    APT45M100J [Microchip]

    APT45M100J
    APT45M100J

    Part No:

    APT45M100J

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Thermal Resistance Junction To Ambient
    Product FAQ

    1. Is APT45M100J available for RFQ?

    Yes. APT45M100J by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APT45M100J?

    Pricing for APT45M100J can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APT45M100J?

    APT45M100J is a Microchip Transistors with Thermal Resistance Junction To Ambient: 40°C/W and Thermal Resistance Junction To Case: 0.45°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APT45M100J?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APT45M100J be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APT45M100J?

    Yes. If APT45M100J is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APT45M100J

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product
    40°C/W
    Continuous Drain Current
    11 Amps
    Drain Source Voltage
    1000 Volts
    Pulsed Drain Current
    44 Amps
    Gate Threshold Voltage
    2 Volts ~ 4 Volts
    Thermal Resistance Junction To Case
    0.45°C/W
    Input Capacitance
    3660pF
    Output Capacitance
    390pF
    Total Gate Charge
    225 nC
    Package
    TO-247
    Avalanche Current
    11 Amps
    Continuous Source Current
    11 Amps
    Diode Forward Voltage
    1.3 Volts
    Drain Source Breakdown Voltage
    1000 Volts
    Drain Source On State Resistance
    1.00 Ohms
    Fall Time
    24 ns
    Gate Drain Charge Max
    105 nC
    Gate Source Charge Max
    24 nC
    Gate Source Leakage Current
    -100 nA
    Gate Source Voltage Continuous
    -30 Volts
    Gate Source Voltage Transient
    -40 Volts
    Lead Temperature
    300°C
    Linear Derating Factor
    2.24W/°C
    On State Drain Current
    11 Amps
    Operating Junction Temperature
    -55°C ~ 150°C
    Pulsed Source Current
    44 Amps
    Repetitive Avalanche Energy
    30 mJ
    Reverse Recovery Charge
    9 mC
    Reverse Recovery Time
    700 ns
    Reverse Transfer Capacitance Max
    200pF
    Rise Time
    22 ns
    Single Pulse Avalanche Energy
    1210 mJ
    Storage Junction Temperature Max
    150°C
    Storage Junction Temperature Min
    -55°C
    Total Power Dissipation
    280 Watts
    Turn Off Delay Time Max
    85 ns
    Turn On Delay Time
    24 ns
    Zero Gate Voltage Drain Current Max
    250uA

    Products Detail

    Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. Features include faster switching, 100% avalanche tested, lower leakage, and popular TO-247 package.

    Key Features

    • Faster Switching, 100% Avalanche Tested, Lower Leakage, Popular TO-247 Package, High Voltage (1000V), High Current (11A), Low On-Resistance (1.000 Ohms)
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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