APT5518BFLLG [MICROSEMI]

Name: APT5518BFLLG
Brand: MICROSEMI
SKU: APT5518BFLLG
Availability: InStock

Part No:

APT5518BFLLG

Transistors

Manufacturer:

MICROSEMI

Description:

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Datasheet:

Product FAQ

1. Is APT5518BFLLG available for RFQ?

Yes. APT5518BFLLG by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for APT5518BFLLG?

Pricing for APT5518BFLLG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of APT5518BFLLG?

APT5518BFLLG is a MICROSEMI Transistors with Thermal Resistance Junction To Ambient: 40°C/W and Thermal Resistance Junction To Case: 0.31°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for APT5518BFLLG?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can APT5518BFLLG be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to APT5518BFLLG?

Yes. If APT5518BFLLG is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

RFQ

Part Number:

APT5518BFLLG

Manufacturer:

MICROSEMI

Looking for Pricing? Contact us for volume pricing.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Key features include lower input capacitance, lower Miller capacitance, lower gate charge, increased power dissipation, easier to drive, and fast recovery body diode. Available in TO-247 or surface mount D3PAK packages.