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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APT56F60L Microchip

    APT56F60L [Microchip]

    APT56F60L
    APT56F60L

    Part No:

    APT56F60L

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    600V, 19A N-Channel FREDFET with low trr and optimized body diode for high reliability in ZVS phase shifted bridge circuits.

    RoHS Status:

    Product FAQ

    1. Is APT56F60L available for RFQ?

    Yes. APT56F60L by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APT56F60L?

    Pricing for APT56F60L can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APT56F60L?

    APT56F60L is a Microchip Transistors with Effective Output Capacitance Charge Related: 175pF and Effective Output Capacitance Energy Related: 90pF. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APT56F60L?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APT56F60L be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APT56F60L?

    Yes. If APT56F60L is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APT56F60L

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Gate Source Voltage
    ±30V
    Continuous Drain Current (100C)
    12A
    Continuous Drain Current (25C)
    19A
    Pulsed Drain Current
    65A
    Thermal Resistance Junction To Case
    0.37°C/W
    Input Capacitance
    3550pF
    Output Capacitance
    325pF
    Total Gate Charge
    90 nC
    Reverse Transfer Capacitance
    36pF
    Operating Temperature
    -55°C ~ 150°C
    Package
    TO-247 (APT18F60B), D3PAK (APT18F60S)
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Avalanche Current
    9A
    Breakdown Voltage
    600V
    Breakdown Voltage Temp Coeff
    0.57V/°C
    Case To Sink Thermal Resistance
    0.15°C/W
    Continuous Source Current
    19A
    Current Fall Time
    18 ns
    Current Rise Time
    23 ns
    Diode Forward Voltage
    1.2V
    Drain Source On Resistance
    0.37Ω
    Drain Source On Resistance Typ
    0.31Ω
    Effective Output Capacitance Charge Related
    175pF
    Effective Output Capacitance Energy Related
    90pF
    Forward Transconductance
    17 S
    Gate Drain Charge
    37 nC
    Gate Source Charge
    19 nC
    Gate Source Leakage Current
    ±100 nA
    Gate Source Threshold Voltage
    2.5V ~ 5V
    Gate Source Threshold Voltage Typ
    4V
    Mounting Torque
    10 in·lbf
    Package Weight
    0.22 oz
    Peak Recovery Dv Dt
    20V/ns
    Pulsed Source Current
    65A
    Reverse Recovery Charge 125C Typ
    1.56 µC
    Reverse Recovery Charge 25C Typ
    0.65 µC
    Reverse Recovery Current 125C Typ
    9.2A
    Reverse Recovery Current 25C Typ
    6.7A
    Reverse Recovery Time 125C Max
    380 ns
    Reverse Recovery Time 25C Max
    200 ns
    Single Pulse Avalanche Energy
    495 mJ
    Soldering Temperature
    300°C
    Threshold Voltage Temp Coeff
    -10mV/°C
    Total Power Dissipation 25C
    335W
    Turn Off Delay Time
    60 ns
    Turn On Delay Time
    20 ns
    Zero Gate Voltage Drain Current 125C
    1000µA
    Zero Gate Voltage Drain Current 25C
    250µA

    Products Detail

    Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

    Key Features

    • Fast switching with low EMI
    • Low trr for high reliability
    • Ultra low Crss for improved noise immunity
    • Low gate charge
    • Avalanche energy rated
    • RoHS compliant

    Application scenarios

    • ZVS phase shifted and other full bridge
    • half bridge
    • PFC and other boost converter
    • buck converter
    • single and two switch forward
    • flyback
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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