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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APT65GP60J Microchip

    APT65GP60J [Microchip]

    APT65GP60J
    APT65GP60J

    Part No:

    APT65GP60J

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    600V High Speed PT IGBT with low EMI and high efficiency, featuring POWER MOS 8® technology.

    RoHS Status:

    Product FAQ

    1. Is APT65GP60J available for RFQ?

    Yes. APT65GP60J by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APT65GP60J?

    Pricing for APT65GP60J can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APT65GP60J?

    APT65GP60J is a Microchip Transistors with Zero Gate Voltage Collector Current 125C Max: 5000µA and Zero Gate Voltage Collector Current 25C Max: 1000µA. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APT65GP60J?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APT65GP60J be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APT65GP60J?

    Yes. If APT65GP60J is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APT65GP60J

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Thermal Resistance Junction To Case
    0.16°C/W
    Input Capacitance
    8170pF
    Output Capacitance
    630pF
    Total Gate Charge
    294 nC
    Reverse Transfer Capacitance
    78pF
    Operating Temperature
    -55°C ~ 150°C
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    APT102GA60B2 Package
    TO-247
    APT102GA60L Package
    TO-264
    Collector Emitter Breakdown Voltage
    600V
    Collector Emitter On Voltage 125C Typ
    1.9V
    Collector Emitter On Voltage 25C Min
    2.0V
    Collector Emitter On Voltage 25C Typ
    2.5V
    Collector Emitter Voltage
    600V
    Continuous Collector Current 100C
    102A
    Continuous Collector Current 25C
    183A
    Current Fall Time
    101 ns
    Current Rise Time
    37 ns
    Gate Collector Charge
    106 nC
    Gate Emitter Charge
    56 nC
    Gate Emitter Leakage Current Max
    ±100 nA
    Gate Emitter Threshold Voltage Max
    6V
    Gate Emitter Threshold Voltage Min
    3V
    Gate Emitter Threshold Voltage Typ
    4.5V
    Gate Emitter Voltage
    ±30V
    Mounting Torque
    10 in·lbf
    Package Weight
    5.9 g
    Pulsed Collector Current
    307A
    Switching Safe Operating Area
    307A @ 600V
    Total Power Dissipation
    780W
    Turn Off Delay Time
    212 ns
    Turn Off Switching Energy
    1614 µJ
    Turn On Delay Time
    28 ns
    Turn On Switching Energy
    1354 µJ
    Zero Gate Voltage Collector Current 125C Max
    5000µA
    Zero Gate Voltage Collector Current 25C Max
    1000µA

    Products Detail

    The APT102GA60B2 and APT102GA60L are 600V High Speed Punch-Through IGBTs designed for high-frequency switching applications. They utilize POWER MOS 8® technology with lifetime control to achieve low Eoff (switching energy), reduced VCE(ON) tradeoff for superior efficiency, low gate charge, and ultra-low Cres for improved noise immunity. The intrinsic gate resistance and capacitance control di/dt during switching, minimizing EMI even at high frequencies. These devices offer fast switching, low conduction loss, and simple gate drive requirements.

    Key Features

    • Fast switching with low EMI
    • Very Low Eoff for maximum efficiency
    • Ultra low Cres for improved noise immunity
    • Low conduction loss
    • Low gate charge
    • Increased intrinsic gate resistance for low EMI
    • RoHS compliant

    Application scenarios

    • ZVS phase shifted and other full bridge
    • Half bridge
    • High power PFC boost
    • Welding
    • UPS
    • solar
    • and other inverters
    • High frequency
    • high efficiency industrial
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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