APT9F100S

Name: APT9F100S
Brand: MICROSEMI
SKU: APT9F100S
Availability: InStock

Product FAQ

1. Is APT9F100S available for RFQ?

Yes. APT9F100S by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for APT9F100S?

Pricing for APT9F100S can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of APT9F100S?

APT9F100S is a MICROSEMI Transistors with Effective Output Capacitance Charge: 85pF and Effective Output Capacitance Energy: 46pF. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for APT9F100S?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can APT9F100S be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to APT9F100S?

Part No:

Transistors

Manufacturer:

MICROSEMI

Description:

POWER MOS 8® is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits.

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Power Dissipation

337W

Gate Source Voltage

±30V

Continuous Drain Current (100C)

Continuous Drain Current (25C)

Pulsed Drain Current

37A

Gate Threshold Voltage

2.5V ~ 5V

Input Capacitance

2606pF

Output Capacitance

219pF

Total Gate Charge

80 nC

Reverse Transfer Capacitance

35pF

Operating Temperature

-55°C ~ 150°C

Products Detail

The APT9F100B and APT9F100S are 1000V, 9A N-Channel FREDFETs with a maximum drain-source on resistance of 1.6Ω and reverse recovery time (trr) ≤200ns. They feature low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss for excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling at high frequencies. Optimized for ZVS phase shifted bridge circuits with reduced trr, soft recovery, and high recovery dv/dt capability.

Key Features

Fast switching with low EMI, Low trr for high reliability, Ultra low Crss for improved noise immunity, Low gate charge, Avalanche energy rated, RoHS compliant