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    Part number
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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APTC90DAM60T1G MICROSEMI

    APTC90DAM60T1G [MICROSEMI]

    APTC90DAM60T1G
    APTC90DAM60T1G

    Part No:

    APTC90DAM60T1G

    Category:

    Transistors

    Manufacturer:

    MICROSEMI

    Description:

    Boost chopper V = 900V Super Junction MOSFET with low RDSon and high current capability, in a power module.

    RoHS Status:

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Gate Source Voltage
    ±20V
    Continuous Drain Current (25C)
    59A
    Pulsed Drain Current
    150A
    Gate Threshold Voltage
    2.5V ~ 3.5V
    Input Capacitance
    13.6nF
    Output Capacitance
    0.66nF
    Total Gate Charge
    540 nC
    Operating Temperature
    -40°C ~ 150°C
    Supply Voltage
    900V
    Package
    SP1
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Storage Temperature
    -40°C ~ 125°C
    Avalanche Current
    8.8A
    Continuous Drain Current 80C
    44A
    Diode Dc Forward Current
    60A
    Diode Forward Voltage 60A Max
    2.8V
    Diode Forward Voltage 60A Min
    2.2V
    Diode Peak Reverse Voltage
    1000V
    Drain Source On Resistance
    60mΩ
    Drain Source On Resistance Min
    50mΩ
    Fall Time
    25 ns
    Gate Source Leakage Current
    200 nA
    Isolation Voltage
    4000V
    Max Power Dissipation
    462W
    Mounting Torque
    2 N.m ~ 3 N.m
    Operating Case Temperature
    -40°C ~ 100°C
    Package Weight
    80 g
    Repetitive Avalanche Energy
    2.9 mJ
    Reverse Recovery Time 25C
    235 ns
    Rise Time
    20 ns
    Single Pulse Avalanche Energy
    1940 mJ
    Thermal Resistance Junction To Case Coolmos
    0.27°C/W
    Thermal Resistance Junction To Case Diode
    0.9°C/W
    Thermistor B Value
    3952 K
    Thermistor Resistance 25C
    50kΩ
    Turn Off Delay Time
    400 ns
    Turn Off Switching Energy 25C
    1.5 mJ
    Turn On Delay Time
    70 ns
    Turn On Switching Energy 25C
    3 mJ
    Zero Gate Voltage Drain Current 125C
    1000µA
    Zero Gate Voltage Drain Current 25C
    200µA

    Products Detail

    The module features ultra-low RDSon, low Miller capacitance, ultra-low gate charge, avalanche energy rated, rugged, Kelvin source for easy drive, low stray inductance, internal thermistor for temperature monitoring, and high integration. Benefits include outstanding performance at high frequency operation, direct mounting to heatsink (isolated package), low junction to case thermal resistance, solderable terminals for power and signal, low profile, and RoHS compliance.

    Key Features

    • Ultra low RDSon, Low Miller capacitance, Ultra low gate charge, Avalanche energy rated, Very rugged, Kelvin source for easy drive, Very low stray inductance, Internal thermistor for temperature monitoring, High level of integration, Outstanding performance at high frequency operation, Direct mounting to heatsink (isolated package), Low junction to case thermal resistance, Solderable terminals both for power and signal for easy PCB mounting, Low profile, RoHS Compliant

    Application scenarios

    • AC and DC motor control
    • Switched Mode Power Supplies
    • Power Factor Correction

    Documents

    Datasheets:

    APTC90DAM60T1G
    Product FAQ

    1. Is APTC90DAM60T1G available for RFQ?

    Yes. APTC90DAM60T1G by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APTC90DAM60T1G?

    Pricing for APTC90DAM60T1G can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APTC90DAM60T1G?

    APTC90DAM60T1G is a MICROSEMI Transistors with Thermal Resistance Junction To Case Coolmos: 0.27°C/W and Thermal Resistance Junction To Case Diode: 0.9°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APTC90DAM60T1G?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APTC90DAM60T1G be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APTC90DAM60T1G?

    Yes. If APTC90DAM60T1G is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APTC90DAM60T1G

    Manufacturer:

    MICROSEMI

    Looking for Pricing? Contact us for volume pricing.

    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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