APTCV90TL12T3G [MICROSEMI]

Name: APTCV90TL12T3G
Brand: MICROSEMI
SKU: APTCV90TL12T3G
Availability: InStock

Part No:

APTCV90TL12T3G

Category:

Discrete & Power Modules

Manufacturer:

MICROSEMI

Description:

Three level inverter Power Module with Super junction MOSFET and Trench & Field Stop IGBT

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Isolation Voltage

4000V

RoHS Status

RoHS Compliant

RoHS Status

RoHS Compliant

Storage Temperature

-40°C ~ 125°C

Current Igbt 80C

40A

Current Mosfet 80C

23A

Mounting Torque

2 N.m ~ 3 N.m

Ntc B Tolerance

4%

Ntc B Value

3952 K

Ntc Resistance 25C

50kΩ

Ntc Tolerance

5%

Operating Temperature Case Max

125°C

Operating Temperature Case Min

-40°C

Operating Temperature Junction Max

175°C

Operating Temperature Junction Min

-40°C

Operating Temperature Junction Note

* Tjmax = 150°C for Q1 & Q4

Package Weight

110 g

Supply Voltage Igbt

1200V

Supply Voltage Mosfet

900V

Thermal Resistance Junction To Case Diode

1.2°C/W

Thermal Resistance Junction To Case Igbt

0.68°C/W

Thermal Resistance Junction To Case Mosfet

0.5°C/W

Products Detail

The APTCV90TL12T3G is a three-level inverter power module integrating Super junction MOSFETs (Q1, Q4) and Trench & Field Stop IGBTs (Q2, Q3). Features include ultra-low RDSon and gate charge for MOSFETs, low voltage drop and switching losses for IGBTs, Kelvin emitter for easy drive, low stray inductance, high integration level, and internal thermistor for temperature monitoring. Benefits include stable temperature behavior, ruggedness, direct mounting to heatsink (isolated package), low junction-to-case thermal resistance, and low profile. RoHS compliant.

Key Features

Q2, Q3 Trench + Field Stop IGBT 4: Low voltage drop, Low leakage current, Low switching losses
Q1, Q4 Super junction MOSFET: Ultra low RDSon, Low Miller capacitance, Ultra low gate charge, Avalanche energy rated, Very rugged
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant

Application scenarios

Solar converter
Uninterruptible Power Supplies

Documents

Datasheets:

APTCV90TL12T3G Power Products Catalog

Product FAQ

1. Is APTCV90TL12T3G available for RFQ?

Yes. APTCV90TL12T3G by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for APTCV90TL12T3G?

Pricing for APTCV90TL12T3G can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of APTCV90TL12T3G?

APTCV90TL12T3G is a MICROSEMI Discrete & Power Modules with Thermal Resistance Junction To Case Mosfet: 0.5°C/W and Thermal Resistance Junction To Case Diode: 1.2°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for APTCV90TL12T3G?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can APTCV90TL12T3G be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to APTCV90TL12T3G?

Yes. If APTCV90TL12T3G is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Discrete & Power Modules parts or compatible alternatives.

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