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    1. Home/
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    3. Discrete Semiconductors/
    4. Discrete & Power Modules/
    5. APTGF50H60T1G MICROSEMI

    APTGF50H60T1G [MICROSEMI]

    APTGF50H60T1G
    APTGF50H60T1G

    Part No:

    APTGF50H60T1G

    Category:

    Discrete & Power Modules

    Manufacturer:

    MICROSEMI

    Description:

    600V, 50A Full-Bridge NPT IGBT Power Module with integrated diodes and temperature monitoring.

    RoHS Status:

    Product FAQ

    1. Is APTGF50H60T1G available for RFQ?

    Yes. APTGF50H60T1G by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APTGF50H60T1G?

    Pricing for APTGF50H60T1G can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APTGF50H60T1G?

    APTGF50H60T1G is a MICROSEMI Discrete & Power Modules with Collector Emitter Leakage Current 125C: 500µA and Collector Emitter Leakage Current 25C: 250µA. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APTGF50H60T1G?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APTGF50H60T1G be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APTGF50H60T1G?

    Yes. If APTGF50H60T1G is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Discrete & Power Modules parts or compatible alternatives.

    RFQ

    Part Number:

    APTGF50H60T1G

    Manufacturer:

    MICROSEMI

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Power Dissipation
    250W
    Isolation Voltage
    4000V
    Operating Junction Temperature
    -40°C ~ 150°C
    Gate Emitter Voltage
    ±20V
    Supply Voltage
    600V
    Package
    SP1
    RoHS Status
    RoHS Compliant
    Storage Temperature
    -40°C ~ 125°C
    Collector Emitter Leakage Current 125C
    500µA
    Collector Emitter Leakage Current 25C
    250µA
    Continuous Collector Current 25C
    65A
    Continuous Collector Current 80C
    50A
    Diode Forward Current
    30A
    Diode Peak Reverse Voltage
    600V
    Fall Time 125C
    21 ns
    Gate Emitter Leakage Current
    400 nA
    Gate Threshold Voltage
    4V ~ 6V
    Input Capacitance
    2200pF
    Mounting Torque
    2 to 3 N.m
    Operating Case Temperature
    -40°C ~ 100°C
    Output Capacitance
    323pF
    Package Weight
    80 g
    Peak Collector Current
    230A
    Reverse Recovery Charge 125C
    480 nC
    Reverse Recovery Charge 25C
    35 nC
    Reverse Recovery Time 125C
    160 ns
    Reverse Recovery Time 25C
    25 ns
    Reverse Transfer Capacitance
    200pF
    Rise Time 125C
    10 ns
    Thermal Resistance Diode
    1.2°C/W
    Thermal Resistance Igbt
    0.5°C/W
    Thermistor B Constant
    3952 K
    Thermistor Resistance 25C
    50kΩ
    Total Gate Charge
    166 nC
    Turn Off Delay Time 125C
    130 ns
    Turn Off Energy 125C
    1 mJ
    Turn On Delay Time 125C
    42 ns
    Turn On Energy 125C
    0.5 mJ

    Products Detail

    Non Punch Through (NPT) Fast IGBT with low voltage drop, low tail current, switching frequency up to 100 kHz, soft recovery parallel diodes, low diode VF, low leakage current, RBSOA and SCSOA rated. Very low stray inductance, symmetrical design, internal thermistor for temperature monitoring, high level of integration. Benefits include outstanding high-frequency performance, direct mounting to heatsink (isolated package), low junction to case thermal resistance, solderable terminals for easy PCB mounting, low profile, and ability to parallel legs for higher current capability. RoHS compliant.

    Key Features

    • Non Punch Through (NPT) Fast IGBT: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Soft recovery parallel diodes, Low diode VF, Low leakage current, RBSOA and SCSOA rated. Very low stray inductance, Symmetrical design. Internal thermistor for temperature monitoring. High level of integration. Outstanding performance at high frequency operation. Direct mounting to heatsink (isolated package). Low junction to case thermal resistance. Solderable terminals both for power and signal for easy PCB mounting. Low profile. Each leg can be easily paralleled to achieve a phase leg of twice the current capability. RoHS Compliant.

    Application scenarios

    • Welding converters
    • Switched Mode Power Supplies
    • Uninterruptible Power Supplies
    • Motor control

    Documents

    Datasheets:

    APTGF50H60T1GPower Products Catalog
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method
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