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    1. Home/
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    3. Discrete Semiconductors/
    4. Discrete & Power Modules/
    5. APTGF50VDA120T3G MICROSEMI

    APTGF50VDA120T3G [MICROSEMI]

    APTGF50VDA120T3G
    APTGF50VDA120T3G

    Part No:

    APTGF50VDA120T3G

    Category:

    Discrete & Power Modules

    Manufacturer:

    MICROSEMI

    Description:

    Dual Boost chopper IGBT power module with 1200V and 50A @ Tc=80°C.

    RoHS Status:

    Product FAQ

    1. Is APTGF50VDA120T3G available for RFQ?

    Yes. APTGF50VDA120T3G by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APTGF50VDA120T3G?

    Pricing for APTGF50VDA120T3G can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APTGF50VDA120T3G?

    APTGF50VDA120T3G is a MICROSEMI Discrete & Power Modules with Collector Emitter Saturation Voltage Max 25C: 3.7V and Collector Emitter Saturation Voltage Min 25C: 3.2V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APTGF50VDA120T3G?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APTGF50VDA120T3G be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APTGF50VDA120T3G?

    Yes. If APTGF50VDA120T3G is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Discrete & Power Modules parts or compatible alternatives.

    RFQ

    Part Number:

    APTGF50VDA120T3G

    Manufacturer:

    MICROSEMI

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Isolation Voltage
    4000V
    Operating Junction Temperature
    -40°C ~ 150°C
    Gate Emitter Voltage
    ±20V
    Package
    SP3
    RoHS Status
    RoHS Compliant
    Storage Temperature
    -40°C ~ 125°C
    Collector Emitter Breakdown Voltage
    1200V
    Collector Emitter Saturation Voltage 125C
    4.0V
    Collector Emitter Saturation Voltage Max 25C
    3.7V
    Collector Emitter Saturation Voltage Min 25C
    3.2V
    Continuous Collector Current 25C
    70A
    Continuous Collector Current 80C
    50A
    Diode Dc Forward Current
    60A
    Diode Forward Voltage 120A
    3.0V
    Diode Forward Voltage 60A 125C
    1.8V
    Diode Forward Voltage 60A Max
    3.0V
    Diode Forward Voltage 60A Min
    2.5V
    Diode Peak Reverse Voltage
    1200V
    Diode Reverse Leakage 125C
    500µA
    Diode Reverse Leakage 25C
    100µA
    Fall Time 125C
    40 ns
    Fall Time 25C
    30 ns
    Gate Collector Charge
    200 nC
    Gate Emitter Charge
    35 nC
    Gate Emitter Leakage Current
    100 nA
    Gate Threshold Voltage
    4.5V ~ 6.5V
    Input Capacitance
    3450pF
    Junction To Case Thermal Resistance Diode
    0.9°C/W
    Junction To Case Thermal Resistance Igbt
    0.4°C/W
    Max Power Dissipation
    312W
    Mounting Torque
    2 N.m ~ 3 N.m
    Ntc B Value
    3952 K
    Ntc B Value Tolerance
    4%
    Ntc Resistance 25C
    50kΩ
    Ntc Resistance Tolerance
    5%
    Operating Case Temperature
    -40°C ~ 100°C
    Output Capacitance
    330pF
    Package Weight
    110 g
    Pulsed Collector Current
    150A
    Rbsoa
    100A @ 1200V
    Reverse Recovery Charge 125C
    2890 nC
    Reverse Recovery Charge 25C
    560 nC
    Reverse Recovery Time 125C
    350 ns
    Reverse Recovery Time 25C
    265 ns
    Reverse Transfer Capacitance
    220pF
    Rise Time 125C
    65 ns
    Rise Time 25C
    65 ns
    Short Circuit Current
    300A
    Total Gate Charge
    330 nC
    Turn Off Delay Time 125C
    360 ns
    Turn Off Delay Time 25C
    320 ns
    Turn Off Switching Energy 125C
    3.05 mJ
    Turn On Delay Time 125C
    35 ns
    Turn On Delay Time 25C
    35 ns
    Turn On Switching Energy 125C
    6.9 mJ
    Zero Gate Voltage Collector Current 125C
    500µA
    Zero Gate Voltage Collector Current 25C
    250µA

    Products Detail

    Non Punch Through (NPT) Fast IGBT module featuring low voltage drop, low tail current, switching frequency up to 50 kHz, soft recovery parallel diodes, low diode VF, low leakage current, RBSOA and SCSOA rated, symmetrical design, Kelvin emitter for easy drive, very low stray inductance, high level of integration, and internal thermistor for temperature monitoring. Benefits include outstanding performance at high frequency operation, direct mounting to heatsink (isolated package), low junction to case thermal resistance, solderable terminals for power and signal for easy PCB mounting, low profile, easy paralleling due to positive TC of VCEsat, and the ability to parallel each leg for doubled current capability. RoHS compliant.

    Key Features

    • Non Punch Through (NPT) Fast IGBT
    • Low voltage drop
    • Low tail current
    • Switching frequency up to 50 kHz
    • Soft recovery parallel diodes
    • Low diode VF
    • Low leakage current
    • RBSOA and SCSOA rated
    • Symmetrical design
    • Kelvin emitter for easy drive
    • Very low stray inductance
    • High level of integration
    • Internal thermistor for temperature monitoring
    • Outstanding performance at high frequency operation
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • Solderable terminals for power and signal for easy PCB mounting
    • Low profile
    • Easy paralleling due to positive TC of VCEsat
    • Each leg can be easily paralleled to achieve a single boost of twice the current capability
    • RoHS compliant

    Application scenarios

    • AC and DC motor control
    • Switched Mode Power Supplies
    • Power Factor Correction (PFC)
    • Interleaved PFC

    Documents

    Datasheets:

    APTGF50VDA120T3GAPTGF50VDA120T3G-Microsemi-datasheet-17744598.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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