APTM10SKM05TG [Microchip]

APTM10SKM05TG Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 3000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 20000pF @ 25V.This device conducts a continuous drain current (ID) of 278A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 280 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 80 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

APTM10SKM05TG Features

the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 278A
the turn-off delay time is 280 ns
a 100V drain to source voltage (Vdss)

APTM10SKM05TG Applications

There are a lot of Microsemi Corporation
APTM10SKM05TG applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching