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APTM120UM95FAG - MICROSEMI | Electronic Components

Name: APTM120UM95FAG
Brand: MICROSEMI
SKU: APTM120UM95FAG
Availability: InStock

Product FAQ

1. Is APTM120UM95FAG available for RFQ?

Yes. APTM120UM95FAG by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for APTM120UM95FAG?

Pricing for APTM120UM95FAG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of APTM120UM95FAG?

APTM120UM95FAG is a MICROSEMI Transistors with Zero Gate Voltage Drain Current 125C: 3mA and Thermal Resistance Junction To Case: 0.055°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for APTM120UM95FAG?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can APTM120UM95FAG be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

Part No:

APTM120UM95FAG

Transistors

Manufacturer:

MICROSEMI

Description:

Single Switch DSS power module with 1200V breakdown voltage, 95mΩ typical on-resistance, and 103A continuous drain current at 25°C.

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Power Dissipation

2272W

Gate Source Voltage

±30V

Continuous Drain Current (25C)

103A

Pulsed Drain Current

412A

Gate Threshold Voltage

3V ~ 5V

Thermal Resistance Junction To Case

0.055°C/W

Input Capacitance

30.9nF

Output Capacitance

4.6nF

Total Gate Charge

1122 nC

Reverse Transfer Capacitance

0.78nF

Supply Voltage

1200V

Products Detail

This power module features Power MOS 7® FREDFETs with low RDSon, low input and Miller capacitance, low gate charge, fast intrinsic reverse diode, and avalanche energy rating. It has Kelvin source for easy drive, very low stray inductance, symmetrical design, M5 power connectors, and high integration. The module uses AlN substrate for improved thermal performance. Benefits include outstanding high-frequency operation, direct mounting to heatsink (isolated package), low junction-to-case thermal resistance, and low profile. It is RoHS compliant.

Key Features

Power MOS 7® FREDFETs: low RDSon, low input and Miller capacitance, low gate charge, fast intrinsic reverse diode, avalanche energy rated, very rugged
Kelvin source for easy drive
very low stray inductance (symmetrical design, M5 power connectors)
high level of integration
AlN substrate for improved thermal performance
outstanding performance at high frequency operation
direct mounting to heatsink (isolated package)
low junction to case thermal resistance
low profile
RoHS compliant