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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APTMC60TLM55CT3AG MICROSEMI

    APTMC60TLM55CT3AG [MICROSEMI]

    APTMC60TLM55CT3AG
    APTMC60TLM55CT3AG

    Part No:

    APTMC60TLM55CT3AG

    Category:

    Transistors

    Manufacturer:

    MICROSEMI

    Description:

    Three level inverter SiC Power MOSFET module with integrated SiC Schottky Diodes, featuring low RDS(on), high temperature performance, and Kelvin emitter for easy drive.

    RoHS Status:

    Product FAQ

    1. Is APTMC60TLM55CT3AG available for RFQ?

    Yes. APTMC60TLM55CT3AG by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APTMC60TLM55CT3AG?

    Pricing for APTMC60TLM55CT3AG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APTMC60TLM55CT3AG?

    APTMC60TLM55CT3AG is a MICROSEMI Transistors with Operating Junction Temperature: -40°C ~ 175°C and Operating Case Temperature: -40°C ~ 125°C. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APTMC60TLM55CT3AG?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APTMC60TLM55CT3AG be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APTMC60TLM55CT3AG?

    Yes. If APTMC60TLM55CT3AG is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APTMC60TLM55CT3AG

    Manufacturer:

    MICROSEMI

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Storage Temperature
    -40°C ~ 125°C
    Weight
    110 g
    Diode 1200V Rthjc
    0.50°C/W
    Diode 1200V Vf Max 175C
    3.0V
    Diode 1200V Vf Max 25C
    1.8V
    Diode 1200V Vf Min 175C
    2.3V
    Diode 1200V Vf Min 25C
    1.6V
    Diode 1200V Vrrm
    1200V
    Diode 600V Rthjc
    0.8°C/W
    Diode 600V Vf Max 175C
    2.4V
    Diode 600V Vf Max 25C
    1.8V
    Diode 600V Vf Min 175C
    2.0V
    Diode 600V Vf Min 25C
    1.6V
    Diode 600V Vrrm
    600V
    Isolation Voltage
    4000V
    Mosfet Eoff
    0.5 mJ
    Mosfet Eon
    0.9 mJ
    Mosfet Id 25C
    48A
    Mosfet Id 80C
    38A
    Mosfet Idm
    100A
    Mosfet Pd
    263W
    Mosfet Rds On Max 175C
    90mΩ
    Mosfet Rds On Max 25C
    52mΩ
    Mosfet Rthjc
    0.57°C/W
    Mosfet Vdss
    1200V
    Mosfet Vgs Max
    -6/+23V
    Mosfet Vgs Recommended
    -5/18V
    Mounting Torque
    2 N.m ~ 3 N.m
    Ntc Beta
    3952 K
    Ntc Resistance 25C
    50kΩ
    Operating Case Temperature
    -40°C ~ 125°C
    Operating Junction Temperature
    -40°C ~ 175°C

    Products Detail

    This SiC MOSFET Power Module is designed for three-level inverter applications. It features SiC Power MOSFETs with low RDS(on) and high temperature performance, and SiC Schottky Diodes with zero reverse recovery and zero forward recovery. The module includes Kelvin emitter for easy drive, very low stray inductance, high level of integration, internal thermistor for temperature monitoring, and AlN substrate for improved thermal performance. Benefits include stable temperature behavior, ruggedness, direct mounting to heatsink (isolated package), low junction to case thermal resistance, easy paralleling due to positive TC of VCEsat, low profile, and RoHS compliance.

    Key Features

    • SiC Power MOSFET: Low RDS(on), High temperature performance
    • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
    • Kelvin emitter for easy drive
    • Very low stray inductance
    • High level of integration
    • Internal thermistor for temperature monitoring
    • AlN substrate for improved thermal performance
    • Stable temperature behavior
    • Very rugged
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • Easy paralleling due to positive TC of VCEsat
    • Low profile
    • RoHS Compliant

    Application scenarios

    • Uninterruptible Power Supplies

    Documents

    Datasheets:

    APTMC60TLM55CT3AGAPTMC60TLM55CT3AG-Microsemi-datasheet-17741077.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method
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